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Electro-optical coupled-pair using a schottky barrier diode detector

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专利汇可以提供Electro-optical coupled-pair using a schottky barrier diode detector专利检索,专利查询,专利分析的服务。并且There is disclosed an electro-optical coupled pair utilizing a Schottky barrier diode detector in combination with a light source in which in the preferred embodiment the bottom portion of the Schottky barrier diode is hollowed out by anisotropically etching the wafer used for the diode to provide the hollowed-out portion with smooth inclined sidewalls over the light source for coupling light generated laterally into the wafer. Because of the anisotropic etching, the sidewalls serve to couple a much greater percentage of the generated light into the diode to produce more electron-hole pairs, and therefore more external signal. This configuration thus captures non-vertically generated light which would otherwise be lost, thus increasing the efficiency of Schottky diode detectors and the coupled pair.,下面是Electro-optical coupled-pair using a schottky barrier diode detector专利的具体信息内容。

1. An electro-optical coupled-pair comprising: a light source; and a Schottky barrier detector, said detector including a lightly doped semiconductor wafer having a hollowed-out region characterized by outwardly and downwardly flared inclined smooth sidewalls and a flat smooth portion parallel to the top surface of said wafer, said wafer being positioned over said light source, said detector further including a metal layer on top of said top surface in vertical spaced adjacency to said flat smooth portion of saId hollowed-out region, and means encircling said metal layer and spaced therefrom on said top surface for making ohmic contact to said wafer, whereby isotropically emitted light from said light source is collected by said wafer and effectively coupled into said detector for the production of electron-hole pairs.
2. The coupled-pair as recited in claim 1 wherein said hollowed-out region is formed by anisotropically etching said wafer.
3. The coupled-pair as recited in claim 2 wherein said wafer is silicon having a <100> crystallographic orientation, and wherein said anisotropic etchant attacks all planes except the <111> planes of said crystal, whereby the angle of inclination of said sidewalls optimally couples energy into said wafer.
4. The coupled-pair as recited in claim 1 wherein said light source is a light emitting diode.
5. The coupled-pair as recited in claim 4 wherein said light emitting diode is a planar diffused gallium arsenide light emitting diode.
6. The coupled-pair as recited in claim 1 wherein any space between said light source and said detector is filled with a hard transparent optical coupling material.
7. The coupled-pair as recited in claim 6 wherein said optical coupling material is an epoxy.
8. The coupled-pair as recited in claim 1 wherein said hollowed-out region is in the form of a truncated pyramid formed by anisotropically etching said wafer.
9. The coupled-pair as recited in claim 8 wherein said wafer includes a V-shaped channel communicating at one end with said hollowed-out region and at its other end exteriorly to said wafer, said channel having been formed in the same anisotropic etching step used in the formation of said truncated pyramid, said channel adapted to carry contact leads to said light source.
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