Schottky barrier diode

阅读:690发布:2023-10-28

专利汇可以提供Schottky barrier diode专利检索,专利查询,专利分析的服务。并且A Schottky barrier diode includes a body of a semiconductor material of one conductivity type having a guard ring region of the opposite conductivity type therein at a surface of the body. The guard ring extends along the surface of the body in a closed path. A layer of an insulating material is on the surface of the semiconductor body and has an opening therethrough extending to the area of the semiconductor body surface within the guard ring. A metal layer is on the surface of the semiconductor body within the opening in the insulating layer and forms a surface barrier rectifying junction with the semiconductor body. The metal film is also coated on the insulating layer and extends over the guard ring.,下面是Schottky barrier diode专利的具体信息内容。

  • 2. A semiconductor device in accordance with claim 1 including a layer of an electrical insulating material between the surface of the body and the second portion of the metal film.
  • 3. A semiconductor device comprising a body of a semiconductor material of one conductivity type having a surface, a narrow guard ring region of a conductivity type opposite to that of said body in the body at said surface, said guard ring region extending in a closed path along said surface and forming a PN junction with said body, a layer of an electrical insulating material on said surface of the body, said insulating layer having an opening therethrough extending to a portion of said body surface within said guard ring region, and a metal film on said portion of the body surface within the opening in the insulating layer and on said insulating layer, the portion of the metal film on said body surface providing a surface barrier rectifying junction with said body and the portion of the metal film on said insulating layer extending to at least the guard ring region along the entire length of the path of the guard ring region, said metal film being completely spaced from said guard ring region, the thickness of the insulating layer being such that under reverse bias condition a conduction channel electrically connects the metal layer to the guard ring region.
  • 4. A semiconductor device in accordance with claim 3 in which the edge of the opening in the insulating layer is spaced from the guard ring region.
  • 5. A semiconductor device in accordance with claim 4 in which the portion of the insulating layer which extends from said opening to said guard ring region is thinner than the rest of the insulating layer.
  • 说明书全文
    高效检索全球专利

    专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台,是提供专利分析,专利查询,专利检索等数据服务功能的知识产权数据服务商。

    我们的产品包含105个国家的1.26亿组数据,免费查、免费专利分析。

    申请试用

    分析报告

    专利汇分析报告产品可以对行业情报数据进行梳理分析,涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度,系统通过AI智能系统对图表进行解读,只需1分钟,一键生成行业专利分析报告。

    申请试用

    QQ群二维码
    意见反馈