Temperature controlling process and device of processed item in vacuum
专利汇可以提供Temperature controlling process and device of processed item in vacuum专利检索，专利查询，专利分析的服务。并且PURPOSE:To make it feasible to perform fine pattern etching, high quality filming and ion implanting process by a method wherein in case of vacuum processing of plasma etc., temperature control such as highly efficient wafer cooling etc. is performed having no effect upon the processing characteristics. CONSTITUTION:Processing gas supplied from a processing gas bomb 61 is pressure-regulated by a pressure regulating valve 62 and flow-controlled by a massflow controller 63 to be fed to a spare chamber 64. The processing gas at constant pressure is passed through a vacuum gauge 66 to be led to a gas leading-in port 65 while being constantly fedback to the mass controller 63. In such a constitution, a pressure P2 detected by a vacuum gauge 66 and another pressure P1 of refrigerant 70 (i.e. the pressure in refrigerant diaphragm chamber 48) are compared with each other to control the pressure of refrigerant 70 at high level making it higher than the pressure on a member 41 loaded with processed item. Through these procedures, the loading member 41 may be brought into close contact with backside of wafer regardless of any swell due to the pressure of wafer cooling gas and warping of wafer itself.，下面是Temperature controlling process and device of processed item in vacuum专利的具体信息内容。
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