Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent a protrusion into an active region of an inversion preventive layer, and to obviate a narrow channel effect accompanied by the fining of an element by implanting ions to the periphery under the state in which the active region is masked in a size larger than it. CONSTITUTION:A pad oxide film 2 is attached on a P type silicon single crystal substrate 1 through thermal oxidation, a silicon nitride film 3 is deposited on the oxide film 2, and the silicon nitride film 3 is left only in the active region. A resist 4 is rotary-applied on the whole surface, the resist 4 is left only in the side wall section of the silicon nitride film 3 through etching, and the resist 4 of other sections is removed. The P inversion preventive layers 5 are formed to the surface section of the substrate 1 in an element isolation region by implanting the ions of a P type impurity such as boron B to the substrate 1 while using the resist 4 as a mask, the resist 4 is removed completely, and a field oxide film 6 is formed to the surface of the element isolation region of the substrate 1 in a wet oxygen atmosphere.，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
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| 细化晶粒的塑形变形方法及孪晶材料制备装置 | 2020-05-14 | 242 |
| 一种制备超细晶铝及铝合金的复合大塑性变形方法 | 2020-05-08 | 895 |
| 一种端到端税务票据文本检测与识别方法 | 2020-05-12 | 907 |
| 一种黄磷切割反应装置 | 2020-05-13 | 751 |
| 一种基于多尺度深度学习的草图部件分割方法、系统、装置及存储介质 | 2020-05-15 | 873 |
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