Production of compound semiconductor single crystal and apparatus therefor
专利汇可以提供Production of compound semiconductor single crystal and apparatus therefor专利检索，专利查询，专利分析的服务。并且PURPOSE: To make it possible to form a high-quality bulky crystal with hardly any dislocation, by epitaxially growing a III-V compound semiconductor single crystal using current liquid epitaxy.
CONSTITUTION: Current liquid epitaxy is used according to the following constitution. That is a III-V compound and group III element are contained in a crucible 7 and heated at a lower temperature than the melting point of the III-V compound to provide a III-V raw material solution 5 in a saturated state containing the group III element as a solvent and the group V element as a solute. The resultant raw material solution 5 is covered with a liquid encapsulating agent 9 and a high pressure is applied by an inert gas to dip a cathode 2 supported by a supporting rod 22 in the raw material solution 5. An electrically conductive seed crystal 11 attached to the lower end of a pulling up shaft 1 is suspended in the raw material solution 5. A DC current is then passed from a DC power source 3 through the pulling up shaft 1, seed crystal 11, raw material solution 5, cathode 2 and supporting rod 22. The shoulder parts (GF) of the single crystal are formed by the normal liquid-encapsulated Czochralski (LEC) process or growth is directly started from the undersurface of the seed crystal 11 by current liquid epitaxy and then a single crystal having a smaller diameter than that of the crucible is grown.
COPYRIGHT: (C)1988,JPO&Japio，下面是Production of compound semiconductor single crystal and apparatus therefor专利的具体信息内容。
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