Growth method for single crystal silicon
专利汇可以提供Growth method for single crystal silicon专利检索，专利查询，专利分析的服务。并且PURPOSE: To readily obtain a single crystal silicon having an uniform density of defect occurrence, by controlling the thermal history which is applied to the single crystal silicon grown by the Czochralski process with oxygen concentration of the silicon.
CONSTITUTION: A long crystal 21 of a single crystal silicon is pulled up from a melt 32 in a crucible 31 by the Czochralski process. In the process, the crucible 31 is rotated in the direction opposite to the rotational direction of the chuck 33 and the rotational speed (R
c ) of the crucible 31 is set so to slowly increase in proportion to the growth of the long crystal 21, i.e. satisfy the condition of dRc/dt>0. Thereby oxygen is separated in the head part of the crystal 21 using latent nuclei as nuclei by utilizing the oxygen concentration of the long crystal 21 proportional to the rotational speed (R
c ) of the crucible 31 and separation of the oxygen is promoted in the tail part by increasing the rotational speed of the crucible 31 for a few nuclei to provide a high oxygen concentration.
COPYRIGHT: (C)1988,JPO&Japio，下面是Growth method for single crystal silicon专利的具体信息内容。
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