Oxide garnet single crystal
专利汇可以提供Oxide garnet single crystal专利检索，专利查询，专利分析的服务。并且PURPOSE: To provide a substrate single crystal for epitaxial growth of a garnet structural body of which the cations consist of 3 kinds of the oxides of Y, In and Al and which has good productivity.
CONSTITUTION: The cations of the titled single crystal consist of 3 kinds of Y, In and Al and the crystal structure thereof is expressed by, for example, the formula Y
3 In
2 Al
2 O
12 . The crystal lattice constant thereof is 12.42W12.45Å and the segregation coefft. is approximately 1. Since the single crystal has the above-mentioned crystal lattice constant and segregation coefft., this crystal is useful as the garnet substrate single crystal for the epitaxial growth of the bismuth-substd. magnetic garnet film expressed by the formula (BiRe)
3 (FeM)
5 O
12 and since the crystal has excellent light transmittability, the crystal is useful as the substrate for an optical isolator as well. The single crystal is easily produced without twisting the single crystal in the pulling-up state by weighing respective raw materials to obtain the above-mentioned compsn. then housing the raw materials into a crucible and pulling up the crystal by a Czochralski process after heating and melting the crystal at 1,700W1,800°C.
COPYRIGHT: (C)1987,JPO&Japio，下面是Oxide garnet single crystal专利的具体信息内容。
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