Production of semiconductor single crystal
专利汇可以提供Production of semiconductor single crystal专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain the titled single crystal having uniform impurity concentration and free from impurities acting as nucleus, by pulling up a semiconductor single crystal in a specific cylindrical material placed almost parallel to the pulling-up direction and contacting its lower end to the surface of the molten semiconductor.
CONSTITUTION: The shaft 5 for the rotation and vertical shifting of a crucible is inserted in a vessel 8 for Czochralski process, and a molten silicon liquid 4 is put into the crucible 3 attached to the top of the shaft 5. The molten liquid 4 is maintained at ≥1,410°C with the heater 6, and Ar gas is introduced into the vessel 8 through the suction port 10 and exhausted through the exhaustion port 13 to keep the inner pressure of the vessel 8 to 10W20Torr. A semiconductor cylinder 1 having a slit 11 along the axial direction at the circumferential surface and a flange 12 at the top is supported by the lining insulator 7 of the vessel 8. The height of the crucible 3 is adjusted to keep the contact of the surface of the molten liquid 4 with the lower end of the cylinder 1, the seed crystal of the silicon single crystal 2 to be produced is made to contact with the liquid surface, and the crystal is pulled up slowly with the rotary pulling-up shaft 9 to effect the growth of the single crystal 2.
COPYRIGHT: (C)1986,JPO&Japio，下面是Production of semiconductor single crystal专利的具体信息内容。
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