Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To measure a current shunt of each unit by a simple method by forming a coil of a metal film around an electrode of each unit of a high-power semiconductor device having the parallel structure while connecting a plurality of unit elements.
CONSTITUTION: A protective film 5 consisting of a wholly removable substance, for instance, a sensitizer for a phototype process or the like widely used for the manufacture of a semiconductor device is formed on the main surface on the cathode side of a semiconductor element overall the surface, while removing the protective film 5 only of the part where a coil is to be formed. Thereon, a metal film 7, for instance, an aluminium film is formed by a vacuum vapor deposition method or the like. Next, when the protective film 5 and the metal film 7 stuck thereon are removed leaving a detection coil 6, the detection coil 6 of a current can be made. An electrostatic induction thyristor obtained in this way has the detection coil 6 while being able to simply measure a current shunt of each unit.
COPYRIGHT: (C)1990,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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