Process for producing phosphides
阅读：892发布：2021-01-06
专利汇可以提供Process for producing phosphides专利检索，专利查询，专利分析的服务。并且A process for producing a select phosphide, such as gallium, indium or aluminum phosphide comprising; positioning a gaseous phosphorus-source material, such as red phosphorus and a select phosphide-forming source material, such as a Group III element, in a reaction zone; introducing an inert gas, such as nitrogen, into the reaction zone at a pressure above the decomposition pressure of the selected phosphide at a given temperature; heating the gaseous phosphorus-source material to provide a gaseous phosphorus atmosphere within the reaction zone at a pressure at least equal to the pressure of the inert gas; heating said phosphide-forming material to a temperature sufficient for it to react with gaseous phosphorus; cooling an upper portion of the reaction zone to a temperature sufficient to convert gaseous phosphorus to liquid phosphorus; and maintaining the temperaturepressure conditions within the reaction zone for a period of time sufficient for the gaseous phosphorus to react with the heated phosphide-forming material within the reaction zone and form the select phosphide.，下面是Process for producing phosphides专利的具体信息内容。
1. A PROCESS OF PRODUCING A PHOSPHIDE COMPRISING: POSITIONING A SUITABLE GASEOUS PHOSPHORUS-SOURCE MATERIAL ALONG A FIRST LOWER PORTION OF A REACTION ZONE AND POSITIONING A SELECT PHOSPHIDE-FORMING MATERIAL WITHIN A SECOND LOWER PORTION OF SAID REACTION ZONE AND BELOW AN UPPER PORTION OF SAID REACTION ZONE, FEEDING AN INERT GAS INTO SAID REACTION ZONE AND MAINTAINING SAID INERT GAS WITHIN SAID REACTION ZONE AT A PRESSURE AT LEAST EQUAL TO THE DECOMPOSITION PRESSURE OF THE PHOSPHIDE BEING PRODUCED AT A GIVEN TEMPERATURE, COOLING SAID UPPER PORTION OF THE REACTION ZONE TO A TEMPERATURE BELOW THE INVERSION TEMPERATURE OF LIQUID PHOSPHORUS INTO RED PHOSPHORUS AND ABOVE THE MELTING POINT OF YELLOW PHOSPHORUS AT THE PRESSURE WITHIN SAID REACTION ZONE SO THAT ANY GASEOUS PHOSPHORUS COMING IN CONTACT WITH THE COOLED UPPER PORTION OF THE REACTION ZONE IS CONVERTED TO LIQUID PHOSPHORUS, HEATING SAID FIRST LOWER PORTION OF THE REACTION ZONE TO A TEMPERATURE SUFFICIENT TO VAPORIZE AT LEAST A PORTION OF SAID GASEOUS PHOSPHORUS-SOURCE MATERIAL INTO GASEOUS PHOSPHORUS AT A PRESSURE GREATER THAN THE PRESSURE OF THE INERT GAS AT SAID LOWER PORTIONS OF SAID REACTION ZONE BUT BELOW THE PRESSURE OF THE INERT GAS AT THE UPPER PORTION OF THE REACTION ZONE SO AS TO ESTABLISH EQUILIBRIUM PRESSURE CONDITIONS WITHIN SAID REACTION ZONE WHEREIN AT LEAST A TOP PORTION OF SAID UPPER PORTION OF THE REACTION ZONE IS COMPOSED OF SAID INERT GAS AND AT LEAST A TOP PORTION OF SAID LOWER PORTIONS OF THE REACTION ZONE ARE COMPOSED OF GASEOUS PHOSPHORUS, HEATING SAID SECOND LOWER PORTION OF THE REACTION ZONE TO A TEMPERATURE SUFFICIENT TO INITIATE A REACTION BETWEEN SAID PHOSPHORUS-FORMING MATERIAL AND GASEOUS PHOSPHORUS, AND MAINTAINING SAID PRESSURE-TEMPERATURE CONDITIONS WITHIN SAID REACTION ZONE FOR A PERIOD OF TIME SUFFICIENT TO PRODUCE SAID PHOSPHIDE.
2. A process as defined in claim 1 wherein the phosphide-forming material is selected from the group consisting of a Group III element and a mixture of a Group III element and a phosphide. , 3. A process as defined in claim 1 wherein the phosphide-forming material is selected from the group consisting of gallium, indium, aluminum and mixtures thereof.
4. A process as defined in claim 1 wherein the gaseous phosphorus-source material is selected from the group consisting of red phosphorus and liquid phosphorus in a stable state.
5. A process as defined in claim 1 wherein the phosphide-forming material is heated at least sufficiently to form a mOlten mass thereof.
6. A process as defined in claim 5 wherein the phosphide-forming material is heated at least up to the melting point of the phosphide being produced and a suitable seed crystal is immersed into the molten mass of phosphide-forming material and pulled from said molten mass at controlled rates so that a monocrystal of the phosphide being produced is formed on said seed crystal.
7. A process as defined in claim 5 wherein at least an upper portion of the phosphide-forming material is heated above the melting point thereof and below the melting point of the phosphide being produced and a lower portion of the phosphide-forming material is heated up to its melting point and below the temperature of the upper portion thereof.
8. A process as defined in claim wherein the difference in temperature between the upper portion of the phosphide-forming material and the lower portion thereof is in the range of about 30* to 300* C.
9. A process as defined in claim 1 wherein the upper portion of the reaction zone is cooled to a temperature in the range of about 44* to 250* C.
10. A process of producing gallium phosphide comprising: positioning a suitable gaseous phosphorus-source material along the first lower portion of an enclosed reaction zone and positioning the gallium phosphide-forming material within an intermediate portion of said reaction zone and below an upper portion of said reaction zone; feeding an inert gas into said reaction zone and maintaining said inert gas within said reaction zone at a pressure at least equal to 35 atm.; cooling said upper portion of the reaction zone to a temperature below the inversion temperature of liquid phosphorus into red phosphorus and above the melting point of yellow phosphorus at the pressure within said reaction zone so that any gaseous phosphorus coming in contact with the cooled upper portion of the reaction zone is converted to liquid phosphorus; heating said first lower portion of the reaction zone to a temperature equal to at least 580* C. so as to provide a gaseous phosphorus at a pressure greater than the pressure of the inert gas at the lower portions of said reaction zone but below the pressure of the inert gas at the upper portion of the reaction zone and to establish equilibrium pressure conditions within said reaction zone wherein at least a top portion of said upper portion of the reaction zone is composed of said inert gas and at least a top portion of said lower portions of the reaction zone are composed of gaseous phosphorus; heating said second lower portion of the reaction zone to a temperature at least equal to 1470* C. so as to initiate a reaction between said gallium phosphide-forming material and gaseous phosphorus; and maintaining said pressure-temperature conditions within said reaction zone for a period of time sufficient to produce gallium phosphide.
11. A process of producing indium phosphide comprising: positioning a suitable gaseous phosphorus-source material along the first lower portion of a reaction zone and positioning an indium phosphide-forming material within an intermediate portion of said reaction zone and below an upper portion of said reaction zone; feeding an inert gas into said reaction zone and maintaining said inert gas within said reaction zone at a pressure at least equal to 21 atm.; cooling said upper portion of the reaction zone to a temperature below the inversion temperature of liquid phosphorus into red phosphorus and above the melting point of yellow phosphorus at the pressure within said reaction zone so that any gaseous phosphorus coming in contact with the cooled upper portion of the reaction zone is converted to liquid phosphorus; heating said first lower portion of the reaction zone to a temperature at least equal to 560* C. so as to provide gaseous phosphorus at a pressure greater than the prEssure of the inert gas at the lower portions of said reaction zone but below the pressure of the inert gas at the upper portion of the reaction zone and to establish equilibrium pressure conditions within said reaction zone wherein at least a top portion of said upper portion of the reaction zone is composed of said inert gas and at least a top portion of said lower portions of the reaction zone are composed of gaseous phosphorus; heating said second lower portion of the reaction zone to a temperature equal to at least 1060* C. so as to initiate a reaction between said indium phosphide-forming material and gaseous phosphorus; and maintaining said pressure-temperature conditions within said reaction zone for a period of time sufficient to produce said phosphide.
12. A process of producing a phosphide semiconductor material comprising: positioning a gaseous phosphorus-source material selected from the group consisting of red phosphorus and liquid phosphorus in a stable phase within a first lower portion of a reaction zone and positioning a phosphite-forming material selected from the group consisting of a Group III element in a mixture of a Group III and a phosphide within said second lower portion of said reaction zone and below an upper portion of said reaction zone; evacuating said reaction zone of ambient atmosphere and feeding an inert gas into said reaction zone and maintaining said inert gas within said reaction zone at a pressure at least equal to the decomposition pressure of the phosphide semiconductor material being produced at a given temperature; cooling said upper portion of the reaction zone to a temperature below the inversion temperature of liquid phosphorus into red phosphorus and above the melting point of yellow phosphorus at the pressure within said reaction zone so that any gaseous phosphorus coming in contact with the cooled upper portion of the reaction zone is converted to liquid phosphorus; heating said first lower portion of the reaction zone to a temperature sufficient to vaporize at least a portion of said gaseous phosphorus-source material into gaseous phosphorus at a pressure greater than the pressure of the inert gas at the lower portions of said reaction zone but below the pressure of the inert gas at the upper portion of the reaction zone so as to establish equilibrium pressure conditions within said reaction zone wherein at least a top portion of said upper portion of the reaction zone is composed of said inert gas and at least a top portion of said lower portions of the reaction zone are composed of gaseous phosphorus; heating said second lower portion of the reaction zone to a temperature sufficient to initiate a reaction between said phosphide-forming material and gaseous phosphorus; and maintaining said pressure-temperature conditions within said reaction zone for a period of time sufficient to produce said phosphide.
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种A字架上迷迭香套种灵芝的方法 | 2020-05-13 | 748 |
| 一种无残留无机环保农药 | 2020-05-16 | 479 |
| 发光二极管芯片和用于制造发光二极管芯片的方法 | 2020-05-08 | 461 |
| 一种纳米晶体的制备方法 | 2020-05-13 | 503 |
| 一种电梯用阻燃抗菌涂层及其制备方法 | 2020-05-15 | 920 |
| 照明装置 | 2020-05-11 | 814 |
| 化合物半导体晶体管与高密度电容器的集成 | 2020-05-11 | 127 |
| 金属键结的发光二极管及形成金属键结发光二极管的方法 | 2020-05-15 | 912 |
| 一种新型种子存储瓶 | 2020-05-08 | 163 |
| 一种可以捕虫杀虫的粮仓 | 2020-05-14 | 736 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
分析报告
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
磷化铝热门专利
QQ群二维码
意见反馈
意见反馈