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Manufacture of single crystal of aluminum indium phosphide

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专利汇可以提供Manufacture of single crystal of aluminum indium phosphide专利检索,专利查询,专利分析的服务。并且PURPOSE:To provide favorable electrical and optical properties by specifying the mole fraction of trimethyl aluminum in starting materials for III group elements, using phosphorus hydride as a starting material for a V group element, and thermally decomposing the starting materials on a gallium arsenide crystal as a substrate to grow a single crystal on the substrate. CONSTITUTION:A single crystal of aluminum indium phosphide as a III-V group compound semiconductor is manufactured by vapor phase growth using trimethyl aluminum and triethyl indium as starting materials for feeding aluminum and indium. At this time, the mole fraction of trimethyl aluminum in the starting materials for the III group elements is regulated to 0.05-0.25, phosphorus hydride is used as a starting material for a V group element, and the starting materials are thermally decomposed on a gallium arsenide crystal as a substrate to grow a single crystal of aluminum indium phosphide on the substrate.,下面是Manufacture of single crystal of aluminum indium phosphide专利的具体信息内容。

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