子分类：
| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | Laser welding transparent glass sheets using low melting glass or thin absorbing films | US14271797 | 2014-05-07 | US09515286B2 | 2016-12-06 | Leonard Charles Dabich, II; Stephan Lvovich Logunov; Mark Alejandro Quesada; Alexander Mikhailovich Streltsov |
| A method of sealing a workpiece comprising forming an inorganic film over a surface of a first substrate, arranging a workpiece to be protected between the first substrate and a second substrate wherein the inorganic film is in contact with the second substrate; and sealing the workpiece between the first and second substrates as a function of the composition of impurities in the first or second substrates and as a function of the composition of the inorganic film by locally heating the inorganic film with a predetermined laser radiation wavelength. The inorganic film, the first substrate, or the second substrate can be transmissive at approximately 420 nm to approximately 750 nm. | ||||||
| 82 | NON-TOXIC WATER-BASED FRIT SLURRY PASTE, AND ASSEMBLY INCORPORATING THE SAME | US15231819 | 2016-08-09 | US20160347650A1 | 2016-12-01 | David J. COOPER; Timothy A. DENNIS |
| Certain example embodiments of this invention relate to a frit slurry paste for use in assemblies (e.g., a vacuum insulated glass unit or a plasma display panel), and methods of making the same. Frit powder, binder material, and a water-based solvent are mixed together to form an intermediate mixture. The frit powder is substantially lead free, and the water-based solvent is provided at a first temperature. Additional water-based solvent is added to the intermediate mixture to form a frit slurry paste. The additional water-based solvent is provided at a second temperature, with the second temperature being lower than the first temperature. The binder material is provided at a concentration of 0.001%-20% by weight with respect to the frit slurry paste or the frit slurry paste absent the frit powder. The frit slurry paste has a bulk viscosity of 2,000-200,000 cps. | ||||||
| 83 | LASER WELDING TRANSPARENT GLASS SHEETS USING LOW MELTING GLASS OR THIN ABSORBING FILMS | US15090978 | 2016-04-05 | US20160289111A1 | 2016-10-06 | Leonard Charles Dabich, II; Stephan Lvovich Logunov; Mark Alejandro Quesada; Alexander Mikhailovich Streltsov |
| A method of sealing a workpiece comprising forming an inorganic film over a surface of a first substrate, arranging a workpiece to be protected between the first substrate and a second substrate wherein the inorganic film is in contact with the second substrate; and sealing the workpiece between the first and second substrates as a function of the composition of impurities in the first or second substrates and as a function of the composition of the inorganic film by locally heating the inorganic film with a predetermined laser radiation wavelength. The inorganic film, the first substrate, or the second substrate can be transmissive at approximately 420 nm to approximately 750 nm. | ||||||
| 84 | COMPOSITION FOR FORMING SOLAR CELL ELECTRODE AND ELECTRODE MANUFACTURED THEREFROM | US14761215 | 2014-09-12 | US20160284891A1 | 2016-09-29 | Seok Hyun JUNG; Dong Suk KIM; Min Su PARK; Young Ki PARK; Koon Ho KIM; Min Jae KIM; Seak Cheol KIM; Yong Je SEO |
| Disclosed herein is a composition for solar cell electrodes. The composition includes silver powder; glass fits; and an organic vehicle, wherein the glass fits have a glass transition temperature of about 100° C. to about 300° C. and exhibit an exothermic peak starting temperature of about 200° C. to about 400° C. on a DTA curve in TG-DTA analysis. Solar cell electrodes formed of the composition have high open circuit voltage and short circuit current density, thereby providing excellent conversion efficiency and fill factor. | ||||||
| 85 | GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE | US15063420 | 2016-03-07 | US20160190026A1 | 2016-06-30 | Koya MUYARI; Koji ITO; Atsushi OGASAWARA; Kazuhiko ITO |
| Provided is a glass composition for protecting a semiconductor junction which contains at least SiC2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10−6 to 4.13×10−6. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where “a glass material containing lead silicate as a main component” is used. | ||||||
| 86 | Coefficient of thermal expansion filler for vanadium-based frit materials and/or methods of making and/or using the same | US13354963 | 2012-01-20 | US09359247B2 | 2016-06-07 | Timothy A. Dennis |
| Certain example embodiments relate to seals for glass articles. Certain example embodiments relate to a composition used for sealing an insulted glass unit. In certain example embodiments the composition includes vanadium oxide, barium oxide, zinc oxide, and at least one additional additive. For instance, another additive that is a different metal oxide or different metal chloride may be provided. In certain example embodiments, a composition may be combined with a binder solution that substantially or completely burns out by the time the composition is melted. In certain example embodiments, a CTE filler is included with a frit material. In certain example embodiments, a vacuum insulated glass unit includes first and second glass substrates that are sealed together with a seal that includes the above-described composition. | ||||||
| 87 | Vanadium-based frit materials, binders, and/or solvents and methods of making the same | US13339463 | 2011-12-29 | US09309146B2 | 2016-04-12 | Timothy A. Dennis |
| Certain example embodiments relate to seals for glass articles. Certain example embodiments relate to a composition used for sealing an insulted glass unit. In certain example embodiments the composition includes vanadium oxide, barium oxide, zinc oxide, and at least one additional additive. For instance, another additive that is a different metal oxide or different metal chloride may be provided. In certain example embodiments, a composition may be combined with a binder solution that substantially or completely burns out by the time the composition is melted. In certain example embodiments, a vacuum insulated glass unit includes first and second glass substrates that are sealed together with a seal that includes the above-described composition. | ||||||
| 88 | Vanadium-Based Glass Material For Local Heat Sealing, Flat Display Using The Same, And Method For Manufacturing The Display | US14871629 | 2015-09-30 | US20160096768A1 | 2016-04-07 | Yoshinari Takao; Yoshihiro Kohara |
| A vanadium-based glass material for local heat sealing has a glass composition containing, in terms of mol %, 30.0 to 60.0% V2O5, 20.1 to 30.0% ZnO, 10.0 to 25.0% TeO2, 1.0 to 5.0% Al2O3, 0.5 to 5.0% Nb2O3, 0 to 10.0% BaO, 0 to 5.0% Fe2O3, 0 to 5.0% MnO, 0 to 5.0% CuO, 0 to 5.0% SiO2, and 0 to 8.0% CaO, and substantially not containing Pb and P. | ||||||
| 89 | MULTILAYER ELECTRONIC COMPONENT AND CONDUCTIVE PASTE COMPOSITION FOR INTERNAL ELECTRODE | US14485485 | 2014-09-12 | US20150371728A1 | 2015-12-24 | Young Il LEE; So Yeon SONG; Soo Hwan SON |
| A multilayer electronic component may include a multilayer body including a plurality of magnetic material layers, and an internal electrode disposed in the multilayer body. The internal electrode may contain a conductive metal and glass, and the glass contains a vanadium (V) oxide.Also, a conductive paste composition for an internal electrode includes a conductive metal and glass, wherein the glass contains a vanadium (V) oxide. | ||||||
| 90 | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | US14370782 | 2013-04-26 | US09190365B2 | 2015-11-17 | Koji Ito; Atsushi Ogasawara; Koya Muyari |
| A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO2, B2O3, Al2O3 and oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler. | ||||||
| 91 | REVERSE PHOTOCHROMIC BOROSILICATE GLASSES | US14508548 | 2014-10-07 | US20150099130A1 | 2015-04-09 | John Christopher Mauro; Lynn Marie Thirion |
| Borosilicate glasses are disclosed having (in weight %) 66-76% SiO2, 0-8% Al2O3, 10-18% B2O3, 0-4% Li2O, 0-12% Na2O, 0-12% K2O, 1-1.5% Ag, 1.5-2.5% Cl− and 0.01-0.06% of a summed amount of CuO and NiO, wherein the glass composition is bleachable upon exposure to ultraviolet irradiation from a stable state color or shade to a lighter color or shade. Such reverse photochromic borosilicate glass compositions may be thermally darkenable. The borosilicate glasses may be strengthened via ion-exchange strengthening treatment. The borosilicate glasses may retain their reverse photochromic and thermally darkenable properties even after ion-exchange strengthening treatment. | ||||||
| 92 | Glass Enamel For Automotive Applications | US14370102 | 2013-02-20 | US20150013390A1 | 2015-01-15 | Sandeep K. Singh; George E. Sakoske; David A. Klimas |
| This invention relates to glass and enamel compositions. The glass compositions include SiO2, Nb2O5, Na2O, B2O3, ZnO, Bi2O3, TiO2, MoO3, ZrO2, Y2O3, Al2O3, Li2O, and K2O. The glass compositions can be used to form an enamel on a substrate, for example, to decorate and/or protect the substrate. | ||||||
| 93 | RESIN-SEALED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | US14370960 | 2013-04-16 | US20140361446A1 | 2014-12-11 | Atsushi Ogasawara; Koji Ito; Kazuhiko Ito; Koya Muyari |
| A resin-sealed semiconductor device includes a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn junction exposure portion in an outer peripheral tapered region surrounding a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a predetermined glass composition for protecting a semiconductor junction which substantially contains no Pb such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction. | ||||||
| 94 | RESIN-SEALED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING RESIN-SEALED SEMICONDUCTOR DEVICE | US14369729 | 2012-05-08 | US20140361416A1 | 2014-12-11 | Atsushi Ogasawara; Koji Ito; Kazuhiko Ito; Koya Muyari |
| A resin-sealed semiconductor device 10 of the present invention includes: a mesa-type semiconductor element 100 which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin 40 which seals the mesa-type semiconductor element 100, wherein the mesa-type semiconductor element 100 includes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device. | ||||||
| 95 | STRENGTHENED GLASS SUBSTRATES WITH GLASS FRITS AND METHODS FOR MAKING THE SAME | US13464493 | 2012-05-04 | US20130295353A1 | 2013-11-07 | Melinda A. Drake; Lisa A. Lamberson; Robert M. Morena |
| Strengthened glass substrates with glass fits and methods for forming the same are disclosed. According to one embodiment, a method for forming a glass frit on a glass substrate may include providing a glass substrate comprising a compressive stress layer extending from a surface of the glass substrate into a thickness of the glass substrate, the compressive stress having a depth of layer DOL and an initial compressive stress CSi. A glass frit composition may be deposited on at least a portion of the surface of the glass substrate. Thereafter, the glass substrate and the glass frit composition are heated in a furnace to sinter the glass fit composition and bond the glass frit composition to the glass substrate, wherein, after heating, the glass substrate has a fired compressive stress CSf which is greater than or equal to 0.70*CSi. | ||||||
| 96 | COEFFICIENT OF THERMAL EXPANSION FILLER FOR VANADIUM-BASED FRIT MATERIALS AND/OR METHODS OF MAKING AND/OR USING THE SAME | US13354963 | 2012-01-20 | US20120213954A1 | 2012-08-23 | Timothy A. DENNIS |
| Certain example embodiments relate to seals for glass articles. Certain example embodiments relate to a composition used for sealing an insulted glass unit. In certain example embodiments the composition includes vanadium oxide, barium oxide, zinc oxide, and at least one additional additive. For instance, another additive that is a different metal oxide or different metal chloride may be provided. In certain example embodiments, a composition may be combined with a binder solution that substantially or completely burns out by the time the composition is melted. In certain example embodiments, a CTE filler is included with a frit material. In certain example embodiments, a vacuum insulated glass unit includes first and second glass substrates that are sealed together with a seal that includes the above-described composition. | ||||||
| 97 | VANADIUM-BASED FRIT MATERIALS, BINDERS, AND/OR SOLVENTS AND METHODS OF MAKING THE SAME | US13339463 | 2011-12-29 | US20120213953A1 | 2012-08-23 | Timothy A. DENNIS |
| Certain example embodiments relate to seals for glass articles. Certain example embodiments relate to a composition used for sealing an insulted glass unit. In certain example embodiments the composition includes vanadium oxide, barium oxide, zinc oxide, and at least one additional additive. For instance, another additive that is a different metal oxide or different metal chloride may be provided. In certain example embodiments, a composition may be combined with a binder solution that substantially or completely burns out by the time the composition is melted. In certain example embodiments, a vacuum insulated glass unit includes first and second glass substrates that are sealed together with a seal that includes the above-described composition. | ||||||
| 98 | INSULATION PASTE FOR A METAL CORE SUBSTRATE AND ELECTRONIC DEVICE | US12768202 | 2010-04-27 | US20100200283A1 | 2010-08-12 | Akira Inaba; Masaki Hamaguchi; Naoto Nakajima |
| The insulation paste of the present invention contains (a) a glass powder, and (b) an organic solvent, wherein one or both of alumina (Al203) and titanium oxide (TiO2) are contained in the paste as a glass diffusion inhibitor, and the content of this glass diffusion inhibitor is 12 to 50% by weight based on the content of inorganic component in the paste. | ||||||
| 99 | Particulate Corrosion Resistant Coating Composition | US12562611 | 2009-09-18 | US20100006001A1 | 2010-01-14 | Brian Thomas Hazel; Michael James Weimer |
| A composition comprising a glass-forming binder component and a particulate corrosion resistant component. The particulate corrosion resistant component comprises corrosion resistant particulates having: a CTEp of at least about 4 and being solid at a temperature of about 1300° F. (704° C.) or greater; and a maximum median particle size defined by one of the following formulas: (a) for a CTEp of 8 or less, an MP equal to or less than (4.375×CTEp)−10; and (b) for a CTEp of greater than 8, an Mp equal to or less than (−4.375 ×CTEp)+60, wherein CTEp is the average CTE of the corrosion resistant particulates and wherein Mp is the median equivalent spherical diameter (ESD), in microns, of the corrosion resistant particulates. Also disclosed is an article comprising a turbine component comprising a metal substrate and a corrosion resistant coating overlaying the metal substrate, as well as a method for forming at least one layer of the corrosion resistant coating adjacent to the metal substrate. The corrosion resistant coating has a maximum thickness defined by one of the following formulas: (3) for a CTEp of 8 or less, an Tc equal to or less than (1.5×CTEp)−3.5; and (4) for a CTEp of greater than 8, an Tc equal to or less than (−1.5×CTEp)+20.5, wherein Tc is the thickness, in mils, of the corrosion resistant coating. | ||||||
| 100 | Liquid electrostatic coating composition comprising corrosion resistant metal particulates and method for using same | US11075799 | 2005-03-10 | US07601400B2 | 2009-10-13 | Matthew Bernard Buczek; Andrew Jay Skoog; Jane Ann Murphy; Brian Thomas Hazel |
| A composition comprising a liquid mixture having: a corrosion resistant metal particulate component comprising aluminum-containing metal particulates, wherein the aluminum-containing metal particulates have a phosphate and/or silica-containing insulating layer; a glass-forming binder component; and a liquid carrier component. Also disclosed is a method comprising the following steps: (a) providing an article comprising a metal substrate; (b) imparting to the metal substrate an electrical charge; and (c) electrostatically applying a liquid coating composition to the electrically charged metal substrate, wherein the liquid coating composition comprises a liquid mixture having: a corrosion resistant metal particulate component comprising aluminum-containing metal particulates having a phosphate and/or silica-containing insulating layer; glass-forming binder component; and a liquid carrier component. | ||||||
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