| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 半导体器件 | CN85109419 | 1985-12-27 | CN85109419A | 1986-06-10 | 竹村百子; 稻叶道彦; 铁矢俊夫; 小林三男 |
| 一种半导体器件，其芯片是用锡-铜合金焊料固定到引线架上的。其中第一层金属层是插置于芯片和焊料中间的。形成的第一金属层的厚度在2000到3μm的范围之内，是由钛、铬、钒、锆、铌中选取的一种金属，或至少包括一种上述金属的一种合金构成的。由镍、钴或至少含有一种上述金属的一种合金制备的第二金属层插置在第一层金属和焊料之间，其厚度小于第一金属层。 | ||||||
| 2 | 高温无铅焊料用组合物、生产方法及元件 | CN01823276.0 | 2001-05-28 | CN100475996C | 2009-04-08 | J·拉勒纳; N·迪安; M·魏泽 |
| 一种无铅焊料(130)，它包含一种含银2wt%-18wt%、含铋98wt%-82wt%的银铋合金。所述合金的固相线不低于262.5℃、液相线不高于400℃。所述合金还可以包含一种氧亲和力高于该合金的化学元素。 | ||||||
| 3 | 金属配线形成用的转印基板及使用所述转印用基板的金属配线的形成方法 | CN201280056612.1 | 2012-11-08 | CN103959448B | 2017-04-26 | 小柏俊典; 栗田昌昭; 西森尚; 兼平幸男 |
| 本发明涉及一种转印用基板，包括基板、形成在所述基板上的至少一个金属配线原料、形成在所述金属配线原料的表面上的至少1层的覆盖层、形成在所述基板与所述金属配线原料之间的基底金属膜，用于使所述金属配线原料向被转印物转印，其中，所述金属配线原料是将纯度99.9重量％以上、平均粒径0.01μm～1.0μm的金粉等的金属粉末烧结而成的成形体，所述覆盖层是金等的规定的金属或合金，由与所述金属配线原料不同的组成的金属或合金构成，且其总厚度为1μm以下，所述基底金属膜由金等的规定的金属或合金构成。本发明的转印用基板在通过转印法在被转印物形成金属配线时，能够降低被转印物侧的加热温度。 | ||||||
| 4 | 金属配线形成用的转印基板及基于所述转印用基板的金属配线的形成方法 | CN201280056612.1 | 2012-11-08 | CN103959448A | 2014-07-30 | 小柏俊典; 栗田昌昭; 西森尚; 兼平幸男 |
| 本发明涉及一种转印用基板，包括基板、形成在所述基板上的至少一个金属配线原料、形成在所述金属配线原料的表面上的至少1层的覆盖层、形成在所述基板与所述金属配线原料之间的基底金属膜，用于使所述金属配线原料向被转印物转印，其中，所述金属配线原料是将纯度99.9重量％以上、平均粒径0.01μm～1.0μm的金粉等的金属粉末烧结而成的成形体，所述覆盖层是金等的规定的金属或合金，由与所述金属配线原料不同的组成的金属或合金构成，且其总厚度为1μm以下，所述基底金属膜由金等的规定的金属或合金构成。本发明的转印用基板在通过转印法在被转印物形成金属配线时，能够降低被转印物侧的加热温度。 | ||||||
| 5 | 高温无铅焊料用组合物、生产方法及元件 | CN01823276.0 | 2001-05-28 | CN1507499A | 2004-06-23 | J·拉勒纳; N·迪安; M·魏泽 |
| 一种无铅焊料(130)，它包含一种含银2wt％－18wt％、含铋98wt％－82wt％的银铋合金。所述合金的固相线不低于262.5℃、液相线不高于400℃。所述合金还可以包含一种氧亲和力高于该合金的化学元素。 | ||||||
| 6 | 半导体器件 | CN85109419 | 1985-12-27 | CN85109419B | 1988-06-08 | 竹村百子; 稻叶道彦; 铁矢俊夫; 小林三男 |
| 一种半导体器件，其芯片是用锡－－铜合金焊料固定到引线架上的。其中第一层金属层是插置于芯片和焊料中间的。形成的第一金属层的厚度在２０００Ａ°到３μｍ的范围之内，是由钛、铬、钒、锆、铌中选取的一种金属，或至少包括一种上述金属的一种合金构成的。由镍、钴或至少含有一种上述金属的一种合金制备的第二金属层插置在第一层金属和焊料之间，其厚度小于第一金属层。 | ||||||
| 7 | 반도체칩과 기판과의 접합구조가 개선된 반도체장치 | KR1019850009521 | 1985-12-18 | KR1019900008971B1 | 1990-12-15 | 다께무라모모꼬; 이나바미찌히꼬; 데쯔야도시오; 고바야시미쯔오 |
| Semiconductor device in which a semiconductor chip is fixed to a lead frame by Sn-Cu alloy solder with a first metal layer interposed between the chip and the solder. The first metal layer is formed at a thickness ranging from 2000 ANGSTROM to 3 mu m, and made of a metal selected from Ti, Cr, V, Zr, Nb and an alloy containing at least one of these metals. A second metal layer made of Ni, Co or an alloy containing at least one of these metals may be interposed at a thickness smaller than that of the first metal between the first metal layer and the solder. | ||||||
| 8 | TRANSFER SUBSTRATE FOR FORMING METAL WIRING LINE AND METHOD FOR FORMING METAL WIRING LINE BY MEANS OF SAID TRANSFER SUBSTRATE | US14354134 | 2012-11-08 | US20140262003A1 | 2014-09-18 | Toshinori Ogashiwa; Masaaki Kurita; Takashi Nishimori; Yukio Kanehira |
| A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt % or more and an average particle size of 0.01 μm to 1.0 μm, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 μm or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side. | ||||||
| 9 | Braze-based protective coating for silicon nitride | US10682752 | 2003-10-08 | US20050079343A1 | 2005-04-14 | Derek Raybould; Chien-Wei Li; Thomas Strangman; Bjoern Schenk |
| A component comprising a silicon-based substrate and a braze-based protective coating disposed on the silicon-based substrate. The braze-based coating comprises a brazed layer, wherein the brazed layer comprises at least one intermetallic compound. A scale layer may be formed on the brazed layer. An environmental barrier coating may be disposed directly on the brazed layer or directly on the scale layer. A thermal barrier coating may be disposed on the environmental barrier coating. Methods for making a Si-based component having a braze-based protective coating are also disclosed. | ||||||
| 10 | Semiconductor body with layer of solder material comprising chromium | US08937908 | 1997-09-25 | US06268659B1 | 2001-07-31 | Holger Huebner; Manfred Schneegans |
| A semiconductor body with a layer of solder material and a method for soldering the semiconductor body include a chromium layer applied to a rear side of the semiconductor body, and a tin layer applied to the chromium layer. The semiconductor is subsequently soldered directly to the metal substrate, that is without further additives, by being heated to temperatures above 250° C. This metal layer system for soldering power semiconductors to cooling bodies enables two metal layers to be dispensed with as compared with known four metal layer systems. | ||||||
| 11 | Flip-Chip interconnections using lead-free solders | US08614984 | 1996-03-12 | US06224690B1 | 2001-05-01 | Panayotis Constantinou Andricacos; Madhav Datta; Hariklia Deligianni; Wilma Jean Horkans; Sung Kwon Kang; Keith Thomas Kwietniak; Gangadhara Swami Mathad; Sampath Purushothaman; Leathen Shi; Ho-Ming Tong |
| An interconnection structure suitable for the connection of microelectronic circuit chips to packages is provided by this invention. In particular, the invention pertains to the area-array or flip-chip technology often called C4 (controlled collapse chip connection). The structure comprises an adhesion/barrier layer deposited on a passivated substrate (e.g., a silicon wafer), optionally an additional adhesion layer, a solderable layer of a metal selected from the group consisting of Ni, Co, Fe, NiFe, NiCo, CoFe and NiCoFe on the adhesion/barrier layer, and a lead-free solder ball comprising tin as the predominate component and one or more alloying elements selected from Bi, Ag, and Sb, and further optionally including one or more elements selected from the group consisting of Zn, In, Ni, Co and Cu. | ||||||
| 12 | Gold-tin solder suitable for self-aligning applications | US08539491 | 1995-10-06 | USH1934H | 2001-01-02 | Mindaugas Fernand Dautartas |
| A tin-rich gold-tin solder is disclosed which is particularly advantageous for self-aligning applications. When utilized with gold-plated bond locations, the out-diffusion of tin from the solder during heating functions to shift the composition of the remaining solder closer to the eutectic value, thus preserving the liquid state of the solder and improving its reflow quality with respect to conventional eutectic solders. | ||||||
| 13 | Semiconductor electrical heater and method for making same | US73539 | 1993-06-08 | US5498850A | 1996-03-12 | Amitabh Das |
| A method is disclosed for mechanically and electrically bonding metallic materials and semiconductor materials. The method according to the invention may be used, for example, in forming a semiconductor electrical heater, particularly for use in electrical smoking articles. A metallic element, such as a copper alloy power supply tab, is laser welded to a semiconductor element, such as a doped silicon resistive heater element. A laser beam is directed through a hole in the copper alloy tab to melt some silicon material, which flows into the hole in the copper tab, reacts and intermixes with the copper and solidifies to form a slug containing copper silicide. A protective material such as nickel may be applied to protect the copper silicide from oxidation if desired. An ohmic, low resistance contact and high strength bond is provided between the parts. | ||||||
| 14 | Solder joint | US26465 | 1993-03-04 | US5380598A | 1995-01-10 | Carlo Ferrando; Stephen Chan |
| A joint for joining a silicon disc (21) to a molybdenum disc (22) comprises a layer of titanium silicide (20) and a layer of aluminium-silicon solder (23). The titanium silicide is formed by depositing a layer of titanium on the silicon disc and heating the silicon disc and the titanium to around 550.degree. C. to encourage the formation of titanium silicide. A solder disc is then compressed between the silicon and molybdenum discs at about 690.degree. C. to fuse the solder to the titanium silicide layer and the molybdenum disc. The layer of titanium silicide protects the silicon disc from dissolution during soldering, so that diffused-in features in the silicon are not damaged. | ||||||
| 15 | Permanent metallic bonding method | US938195 | 1992-08-28 | US5234153A | 1993-08-10 | Donlad D. Bacon; Avishay Katz; Chien-Hsun Lee; King L. Tai; Yiu-Man Wong |
| A laser device is bonded to a diamond submount by means of a procedure including (1) codepositing an auxiliary layer, on a layer of barrier metal that has been deposited overlying the submount, followed by (2) depositing a wetting layer on the auxiliary layer, and (3) by depositing a solder layer comprising alternating metallic layers, preferably of gold and tin sufficient to form an overall tin-rich gold-tin eutectic composition. The barrier metal is typically W, Mo, Cr, or Ru. Prior to bonding, a conventional metallization such as Ti-Pt-Au (three layers) is deposited on the laser device's bottom ohmic contact, typically comprising Ge. Then, during bonding, the solder layer is brought into physical contact with the laser device's metallization under enough heat and pressure, followed by cooling, to form a permanent joint between them. The thickness of the solder layer is advantageously less than approximately 5 .mu.m. The wetting layer is preferably the intermetallic compound Ni.sub.3 Sn.sub.4, and the auxiliary layer is formed by codepositing the metallic components of this intermetallic together with the barrier metal. | ||||||
| 16 | Brazing material | US314808 | 1989-02-24 | US4921158A | 1990-05-01 | Kuen-Shyang Hwang; Mohammad Sedigh; Mark Roth |
| A mechanical and electrical bond between a silicon semiconductor wafer and a molybdenum contact is created by a multi-layer brazing material. The material includes adjacent layers of titanium and silver along with a layer which is either composed of aluminum or an aluminum-silicon composite. The material is heated to a temperature above its melting point. The aluminum reacts first with the silver, thereby dissolving less of the silicon. This reduces spiking and lowers the contact resistance. | ||||||
| 17 | Method of jointing titanium aluminide structures | US208985 | 1988-06-20 | US4869421A | 1989-09-26 | Brian Norris; Romulo M. Martinez; Francis J. Gojny |
| A method of diffusion brazing two or more titanium alloy metal parts, such as sheets, thick sections or a honeycomb core to one or two face sheets, to form a unitary panel. A low melting copper-nickel layer is interposed between the faying surfaces of two parts to be bonded. The layer may be a foil placed between the surfaces or may be a layer plated onto one or both surfaces. The assembly is heated to at least the eutectic melting temperature of the base metal-interlayer eutectic point for a time sufficient to permit effective wetting and diffusion bonding of the surfaces. The assembly is held at the elevated temperature a sufficient additional time so as to allow isothermal solidification to occur. The assembly is then cooled, resulting in a unitary structure. This method is particularly effective with titanium aluminides face sheets and a titanium aluminide or other titanium base honeycomb core and with an interlayer consisting essentially of nickel and copper. | ||||||
| 18 | Metallization process of a wafer back | US503255 | 1983-06-10 | US4517226A | 1985-05-14 | Livio Baldi; Aldo Maggis |
| On the back of a wafer there are deposited firstly a gold layer and then an aluminium layer (eventually including a small silicon percent). It is finally carried out a thermic treatment at low temperature, which causes the aluminium migration towards the wafer through the gold layer. | ||||||
| 19 | Method for attaching disc- or plate-shaped targets to cooling plates for sputtering systems | US168653 | 1980-07-11 | US4341816A | 1982-07-27 | Richard Lauterbach; Hartmut Keller |
| Disc- or plate-shaped targets for sputtering systems are attached to associated cooling plates by plasma-spraying a surface of such target with a compatible adhesive layer, for example composed of Ni; Ni/Cr mixtures; 80/20 Ni/Al mixtures; Ni/Al/Mo mixtures; Al/bronze mixtures; Mo; W; Al/Si mixtures, Zn, Cu, Cu/glass mixtures, etc., and then coating such adhesive layer with a solderable layer, for example composed of Cu, Cu/glass mixture or Ag, etc., and soldering such solderable layer onto the surface of a cooling plate. Preferably, the adhesive layer and the solderable layer are applied via plasma spraying. | ||||||
| 20 | Method of making gold-cobalt contact for silicon devices | US633696 | 1975-11-20 | US4065588A | 1977-12-27 | Anthony Francis Arnold |
| A contact for a silicon device comprises a layer of gold on the silicon, and a layer of cobalt on the gold layer. The contact is made by depositing gold on the silicon, depositing cobalt on the gold and heating the structure at a temperature between about 300.degree. and about 370.degree. C in a reducing gas atmosphere. | ||||||
QQ群二维码
意见反馈
意见反馈