| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 21 | Power amplifier device | JP2000004205 | 2000-01-13 | JP2000278052A | 2000-10-06 | YAN SERUFAESU |
| PROBLEM TO BE SOLVED: To provide an amplifier avoiding the large drop of voltage between the ends of a transistor by connecting the common electrode of the second couple of input/output transistors to the output electrodes of the first couple of input/output transistors. SOLUTION: A first transistor couple is what is called a Darlington couple formed of an input transistor 11 and an output transistor 12. A second transistor couple 2 is formed of an input transistor 13 and an output transistor 14 and is not the Darlington couple. The transistors 11/12 and 19/20 of the first couples 1 and 4 in a group are connected by the arrangement of the Darlington circuit and the transistors 13/14 and 21/22 on the second couple 2 and 3 in the group have common electrodes which are mutually detached. The common electrode of the input transistors 13 and 21 of the second couple 2 and 3 is connected to the output electrodes of the input transistors 11 and 19 of the first couple 1 and 4. The common electrode of the output transistors 14 and 22 of the second couple 2 and 3 is connected to the output electrodes of the output transistors 12 and 20 of the first couple 1 and 4. | ||||||
| 22 | ESD PROTECTION CIRCUITS | EP06814981.4 | 2006-09-19 | EP1927174B1 | 2013-03-06 | MA, Yintat; LI, Guann-Pyng |
| 23 | GAIN-CONTROLLED LOW NOISE AMPLIFIER MEANS | EP07735908.1 | 2007-05-15 | EP2030318A1 | 2009-03-04 | HESEN, Leonardus, H., M.; BEEKMANS, Edwin, A., J. |
| A gain-controlled low noise amplifier means is provided. The amplifier means comprises an amplifier (T1), a first and second pin diode (D1, D2) coupled in series with opposite forward directions in a negative feedback loop of the amplifier (T1) between an input and an output of the amplifier (T1). The amplifier means furthermore comprises a first current source (IC1) coupled to a node between the first and second pin diode (D1, D2) and a second current source (IC2) coupled to an input of the amplifier (T1). | ||||||
| 24 | Power amplifier arrangement | EP99400201.2 | 1999-01-28 | EP1024591B1 | 2007-01-24 | Servaes, Jan |
| 25 | ESD PROTECTION CIRCUITS | EP06814981.4 | 2006-09-19 | EP1927174A2 | 2008-06-04 | MA, Yintat; LI, Guann-Pyng |
| Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a single reverse diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a single reverse diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributive amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier. | ||||||
| 26 | Power amplifier arrangement | EP99400201.2 | 1999-01-28 | EP1024591A1 | 2000-08-02 | Servaes, Jan |
Amplifier of the G class type, comprising at least one set of two transistor pairs (1,2; 3,4) having together four transistors (11 to 14; 19 to 22) of the same conductivity type with an input electrode, a common electrode and an output electrode, each pair (1,2; 4,3) comprising an input transistor (11,13; 19,21) and an output transistor (12,14; 20,22) in cascade, the output electrode of the input transistor (11,13; 19,21) being coupled to the input electrode of the output transistor (12,14; 20,22), whereby further means (5) are provided for applying an input signal to the input electrodes of the input transistors (11,13; 19,21) of both pairs and both pairs (1,2; 3,4) are biased by two different voltage supplies (6,7; 8,9), control means being provided for switching over from the voltage of one voltage supply (6; 8) to the voltage of the other voltage supply (7; 9), the transistors (11 and 12; 19 and 20) of the first pair (1; 4) of a set being connected in a Darlington circuit arrangement while both transistors (13 and 14; 21 and 22) of the second pair (2; 3) have their common electrodes separated from each other, the common electrode of the input transistor (13 or 21) of the second pair (2 or 3) being coupled to the output electrode of the input transistor (11; 19) of the first pair (1; 4) and the common electrode of the output transistor (14; 22) of the second pair (2; 3) being coupled to the output electrode of the output transistor (12; 20) of the first pair (1; 4). |
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| 27 | Transconductance amplifier having low distortion | US15162963 | 2016-05-24 | US09929705B2 | 2018-03-27 | David J. Menacher |
| A low distortion transconductance amplifier provides current to a grounded load using a virtual ground input stage, a pair of current mirrors, and a bias current source. The virtual ground input stage may include transistors arranged as a Darlington pair. The low distortion transconductance amplifier can function as a voltage-controlled AC current source that is operable at high frequencies. | ||||||
| 28 | Apparatus and methods for radio frequency amplifiers | US15265047 | 2016-09-14 | US09806680B2 | 2017-10-31 | Alan William Ake; David C. Dening |
| Apparatus and methods for radio frequency (RF) amplifiers are disclosed herein. In certain implementations, a packaged RF amplifier includes a first bipolar transistor including a base electrically connected to an RF input pin and a collector electrically connected to an RF output pin, and a second bipolar transistor including a base electrically connected to an emitter of the first bipolar transistor and a collector electrically connected to the RF output pin. The packaged RF amplifier further includes a first bias circuit electrically connected between the base of the first bipolar transistor and the RF output pin, a second bias circuit electrically connected between the base of the first bipolar transistor and a power low pin, an inductor implemented at least partly by a bond wire, and a third bias circuit electrically connected in series with the inductor between the base of the second bipolar transistor and the power low pin. | ||||||
| 29 | Voltage supply for electrical focusing of electron beams | US14494337 | 2014-09-23 | US09660597B2 | 2017-05-23 | Josef Deuringer; Jürgen Oelschlegel |
| A rapidly regulable high-voltage supply for the electrical focusing of an electron beam using a high-voltage final stage is provided. The high-voltage final stage includes a plurality of amplification elements that are interconnected in a series configuration with a first high-voltage connection, and a potential dividing chain including a series of potential dividing elements. The potential dividing chain is interconnected with the first high-voltage connection and has a signal interconnection with the plurality of amplification elements, so that when a voltage is applied across the potential dividing chain, a difference in voltages between a signal input to any amplification element of the plurality of amplification elements and a signal input to a next amplification element of the plurality of amplification elements has a same sign. | ||||||
| 30 | Internally, resistively, sensed darlington amplifier | US13827139 | 2013-03-14 | US09124222B2 | 2015-09-01 | Joseph Cuggino |
| An internally, resistively, sensed Darlington amplifier includes a Darlington amplifier, at least an input transistor, an output transistor, a resistive divider, a signal input node, and a signal output node. The Darlington amplifier is responsive to an input signal and configured to generate an output signal. An internal bias setting resistor is coupled between the signal output node, a collector of the output transistor, and the resistive divider. The bias setting resistor is configured to set and regulate the bias current of the Darlington amplifier. | ||||||
| 31 | Voltage Supply for Electrical Focusing of Electron Beams | US14494337 | 2014-09-23 | US20150084502A1 | 2015-03-26 | Josef Deuringer; Jürgen Oelschlegel |
| A rapidly regulable high-voltage supply for the electrical focusing of an electron beam using a high-voltage final stage is provided. The high-voltage final stage includes a plurality of amplification elements that are interconnected in a series configuration with a first high-voltage connection, and a potential dividing chain including a series of potential dividing elements. The potential dividing chain is interconnected with the first high-voltage connection and has a signal interconnection with the plurality of amplification elements, so that when a voltage is applied across the potential dividing chain, a difference in voltages between a signal input to any amplification element of the plurality of amplification elements and a signal input to a next amplification element of the plurality of amplification elements has a same sign. | ||||||
| 32 | Power amplifier | US13301955 | 2011-11-22 | US08432227B2 | 2013-04-30 | Atsushi Okamura; Kazuya Yamamoto; Takayuki Matsuzuka |
| A power amplifier includes: an amplifying element having a base into which input signals are inputted, a collector to which a collector voltage is applied, and an emitter; and a bias circuit supplying a bias current to the base of the amplifying element. The bias circuit includes a bias current lowering circuit which lowers the bias current when the collector voltage is lower than a prescribed threshold value. | ||||||
| 33 | APPARATUS AND METHODS FOR ELECTRONIC AMPLIFICATION | US13462517 | 2012-05-02 | US20120286878A1 | 2012-11-15 | David Dening; Alan W. Ake |
| Apparatus and methods for electronic amplification are disclosed herein. In certain implementations, an amplifier is provided for amplifying a RF signal, and the amplifier includes a first transistor and a second transistor electrically connected in a Darlington configuration. The first and second transistors can be, for example, bipolar or field effect transistors and the first transistor can amplify an input signal and provide the amplified input signal to the second transistor. The first and second transistors are electrically connected to a power low node such as a ground node through first and second bias circuits, respectively. In certain implementations, the first transistor includes an inductor disposed in the path from the first transistor to the power low voltage. By including the inductor in the path from the first transistor to the ground node, the third order distortion of the amplifier can be improved. | ||||||
| 34 | Bias Point Setting for Third Order Linearity Optimization of Class A Amplifier | US12959970 | 2010-12-03 | US20120139642A1 | 2012-06-07 | Gregory A. Fung |
| An actual linear amplifier distorts an input signal, such as an RF signal, and generates third order intermodulation (IM3) products. In an embodiment of a Class A amplifier, the linear amplifier is a bipolar, common emitter-configured (CE) transistor using a cascode transistor to provide a fixed collector bias voltage to the CE transistor. The CE transistor has a transconductance vs. base-emitter voltage (VBE) characteristic which, when plotted, shows a transconductance that increases with an increasing VBE to a maximum, then drops, then tapers off, wherein there is an inflection point between the maximum transconductance and where the transconductance tapers off. A DC bias circuit provides a DC bias voltage to the base of the CE transistor that causes the CE transistor's operating point to track the inflection point over a range of temperatures. This operating point causes the IM3 products to be greatly reduced. | ||||||
| 35 | Apparatus and methods for amplifiers | US12077895 | 2008-03-21 | US07750734B2 | 2010-07-06 | Pavel Bretchko; Shuyun Zhang; Royal Gosser |
| Circuits and methods for reducing distortion in an amplified signal are disclosed. The circuits and methods may use multiple single-ended gain stages to produce multiple amplified signals. The amplified signals may be processed in combination to produce a resulting output signal having little, or no, distortion. The circuits may be implemented on a single chip as integrated circuits. | ||||||
| 36 | Apparatus and methods for amplifiers | US12077895 | 2008-03-21 | US20080231370A1 | 2008-09-25 | Pavel Bretchko; Shuyun Zhang; Royal Gosser |
| Circuits and methods for reducing distortion in an amplified signal are disclosed. The circuits and methods may use multiple single-ended gain stages to produce multiple amplified signals. The amplified signals may be processed in combination to produce a resulting output signal having little, or no, distortion. The circuits may be implemented on a single chip as integrated circuits. | ||||||
| 37 | Zapping Circuit | US11620250 | 2007-01-05 | US20070171589A1 | 2007-07-26 | Seiji Otake |
| In a zapping circuit of the present invention, resistances each formed of a polysilicon film or a tungsten silicon film are used as zapping elements. As driver elements for partially or completely fusing the resistances, low breakdown voltage MOS transistors are used. Using the MOS transistors makes it possible to reduce a region in which to form the driver elements for zapping, and to thus reduce an IC chip area. | ||||||
| 38 | 増幅器の出力回路 | JP2016055105 | 2016-02-22 | JPWO2017145241A1 | 2018-09-27 | 赤石 健 |
| 消費電流が変化しない増幅器の出力回路を提供する。この増幅器の出力回路は信号に相関した電流を電源回路に流さないので、電源回路による影響を受けない。この増幅器の出力回路は、入力端子と出力端子と共通端子を有する3端子増幅素子と、前記共通端子に接続されて前記3端子増幅素子に略一定の電流を流す定電流回路とを備える。前記出力端子は接地され、前記共通端子と前記定電流回路の接続点と前記出力端の間で増幅出力が取り出される。この増幅器の出力回路の消費電流は定電流回路を流れる電流のみなので、出力電流に相関した消費電流の変化は無い。 | ||||||
| 39 | Power amplifier | JP2011121491 | 2011-05-31 | JP2012249231A | 2012-12-13 | OKAMURA ATSUSHI; YAMAMOTO KAZUYA; MATSUZUKA TAKAYUKI |
| PROBLEM TO BE SOLVED: To obtain a power amplifier that can sufficiently improve operation efficiency also at the time of medium or low output operation.SOLUTION: Input signals are input to the bases of amplification elements Tr1 and Tr2, collector voltages are applied to collectors, and emitters are grounded. Bias circuits Bias1 and Bias2 supply bias currents to the bases of the amplification elements Tr1 and Tr2. The bias circuits Bias1 and Bias2 include bias current reduction circuits 12 reducing the bias currents when the collector voltages become lower than predetermined threshold values. | ||||||
| 40 | Biased Darlington transistor pair, a method and system | JP2006542614 | 2004-11-17 | JP4553904B2 | 2010-09-29 | グラス，ケビン; スミス，マルコム |
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