| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 温度补偿电路及具温度补偿的电子装置 | CN201210348877.0 | 2012-09-18 | CN103684276A | 2014-03-26 | 薛博文 |
| 本发明公开了一种温度补偿电路及具温度补偿的电子装置，该装置包含一处理电路及一电连接处理电路的热敏电阻。处理电路的增益值会随着温度呈一第一曲线变化，热敏电阻的阻抗值则会随着温度呈一第二曲线变化，第二曲线的斜率与第一曲线的斜率成反比，使得热敏电阻的阻抗值随温度的变化量会对应于处理电路的增益值随温度的变化量，进而补偿处理电路，使处理电路维持稳定输出。本发明利用开回路的方式来达到稳定输出的控制，以降低电路成本及电路设计的复杂度。 | ||||||
| 2 | 用于极化调制的放大器构造 | CN200780033672.0 | 2007-09-10 | CN101512895A | 2009-08-19 | 安东尼厄斯·J·M·德格拉乌; 莱昂·C·M·范登厄费尔 |
| 本发明涉及一种用于功率高效线性放大的电子装置。该电子装置包括用于放大相位经过调制的信号(PM)的放大器(RF－PA)。该放大器(RF－PA)适合于由第一调制信号(AM_high)控制，来调制高于预定幅度值的相位经过调制的信号(PM)的幅度。该电子装置此外还适合于衰减放大器(RF－PA)的输出信号，以提供低于预定幅度值的幅度调制。 | ||||||
| 3 | 用于极化调制的放大器构造 | CN200780033672.0 | 2007-09-10 | CN101512895B | 2012-03-28 | 安东尼厄斯·J·M·德格拉乌; 莱昂·C·M·范登厄费尔 |
| 本发明涉及一种用于功率高效线性放大的电子装置。该电子装置包括用于放大相位经过调制的信号(PM)的放大器(RF-PA)。该放大器(RF-PA)适合于由第一调制信号(AM_high)控制，来调制高于预定幅度值的相位经过调制的信号(PM)的幅度。该电子装置此外还适合于衰减放大器(RF-PA)的输出信号，以提供低于预定幅度值的幅度调制。 | ||||||
| 4 | 温度补偿电路及具温度补偿的电子装置 | CN201210348877.0 | 2012-09-18 | CN103684276B | 2016-06-22 | 薛博文 |
| 本发明公开了一种温度补偿电路及具温度补偿的电子装置，该装置包含一处理电路及一电连接处理电路的热敏电阻。处理电路的增益值会随着温度呈一第一曲线变化，热敏电阻的阻抗值则会随着温度呈一第二曲线变化，第二曲线的斜率与第一曲线的斜率成反比，使得热敏电阻的阻抗值随温度的变化量会对应于处理电路的增益值随温度的变化量，进而补偿处理电路，使处理电路维持稳定输出。本发明利用开回路的方式来达到稳定输出的控制，以降低电路成本及电路设计的复杂度。 | ||||||
| 5 | 放大电路 | CN201480050131.9 | 2014-09-05 | CN105556834A | 2016-05-04 | 筱井洁; 浅尾阳 |
| 本发明的课题是提供一种能够保持高输入阻抗而不受到由负反馈产生的增益的设定的影响，并能够降低输入段的晶体管所产生的噪声的放大电路。向差动对(10)的一对栅极输入差动信号，在连接于差动对10的漏极的负载电路(20)产生的差动信号在差动放大段60被放大，此放大后的差动信号介由反馈电路(40)被反馈至差动对(10)的一对源极。在差动对(10)的一对栅极，能够保持高输入阻抗而不受到放大电路的负反馈的增益影响，并能够通过差动对(10)的二个第一晶体管(Q1)以及第二晶体管(Q2)进行输入段的放大，因此，与以往相比，能够减少输入段的晶体管的数量，并降低闪变噪声。 | ||||||
| 6 | 磁头驱动电路、磁记录再现装置和再现头保护方法 | CN200580035047.0 | 2005-09-29 | CN101040325A | 2007-09-19 | 北东慎吾; 冈本勇次郎 |
| 在磁记录再现装置中保护再现头而不会对电路工作产生影响。磁记录再现装置(100)是对未图示的磁盘写入、或读出信息的硬盘装置，包含再现头(10)、记录头(12)、磁头驱动电路(200)。磁头驱动电路(200)是用于驱动控制再现头(10)以及记录头(12)的电路，将再现头(10)、记录头驱动电路(16)、控制部分(18)、可变阻抗元件(20)集成为一体。该磁头驱动电路(200)进行分时切换，以在再现工作时切换为读模式，在记录工作时切换为写模式。控制部分(18)在写模式时降低可变阻抗元件(20)的阻抗。 | ||||||
| 7 | METHOD AND APPARATUS FOR AMPLIFYING SIGNALS | EP15195513.5 | 2015-11-20 | EP3171513A1 | 2017-05-24 | ÖSTMAN, Kim; REIHA, Michael |
There are disclosed various methods and apparatuses for amplifying a signal. In some embodiments of the method a signal is provided to at least one input (Vin) of at least one transconducting element (M1) of an amplifier. An amplified signal is formed on the basis of the input signal (Vin) by the at least one transconducting element (M1). The amplified signal is provided to at least one inductance (Lp) of an output stage. A negative conductance (Rneg) is used to adjust the output impedance of the output stage. In some embodiments the apparatus comprises means for implementing the method.
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| 8 | 電力増幅モジュール | JP2016085355 | 2016-04-21 | JP2017195536A | 2017-10-26 | 小屋 茂樹 |
| 【課題】動作モードに応じて電力増幅器の特性を制御可能な電力増幅モジュールを提供する。 【解決手段】電力増幅モジュールは、入力信号を増幅した増幅信号を出力する増幅器と、増幅信号の高調波が入力される高調波終端回路であって、高調波の周波数に応じてインピーダンスを制御する高調波終端回路と、を備え、所定の時間における増幅信号の電圧の平均値に応じて電源電圧が変化する第1モード、又は入力信号の包絡線の波形に応じて電源電圧が変化する第2モードにおいて動作可能であり、第1モードで動作する場合は、高調波のうち少なくとも1つの偶数次高調波を短絡するように高調波終端回路のインピーダンスを制御し、第2モードで動作する場合は、高調波のうち3次以上の少なくとも1つの奇数次高調波を短絡するように高調波終端回路のインピーダンスを制御する。 【選択図】図1 |
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| 9 | Improved amplifiers with noise reduction | JP2014519041 | 2012-06-28 | JP2014518491A | 2014-07-28 | ダナセカラン、ビジャヤクマー |
| 改善されたクリックおよびポップノイズ低減を備えた増幅器が開示される。 １つの実施では、主出力端子（１１２）において、増幅された信号を出力するように構成された主出力段（１０６）と、二次出力端子（１１６）において、増幅された信号のコピーを出力するように構成された二次出力段（１０８）と、主出力端子（１１２）においてクリックおよびポップノイズを低減させるために、二次出力端子（１１６）と主出力端子（１１２）との間に可変抵抗結合を提供するように構成された信号結合器（１１８）とを含む増幅器（１００）が提供される。 | ||||||
| 10 | Semiconductor device | JP2007137127 | 2007-05-23 | JP2008294158A | 2008-12-04 | INOUE AKIRA; GOTO KIYOTAKE; KANETANI YASUSHI; WATANABE SHINSUKE |
| PROBLEM TO BE SOLVED: To provide a semiconductor device which is compact, light-weight, and inexpensive and is hard to be destroyed even if it is applied with excessive power. SOLUTION: A current limiting circuit 12 is connected to the gate (input terminal) of a transistor 11 for amplification. The current limiting circuit 12 includes a protection transistor 13, a first protection resistor 14 for connecting the drain and gate of the protection transistor 13, and a second protection resistor 15 for connecting the source and gate of the protection transistor 13. The current limiting circuit 12 limits a current flow in such a manner that power larger than the maximum allowable power of the transistor 11 for amplification may not flow thereinto. COPYRIGHT: (C)2009,JPO&INPIT | ||||||
| 11 | Linear low noise amplifier | US15174856 | 2016-06-06 | US09887678B2 | 2018-02-06 | Amir Hossein Masnadi Shirazi Nejad; Mazhareddin Taghivand; Seyed Hossein Miri Lavasani; Mohammad Emadi |
| A linear low noise amplifier is disclosed. In at least one exemplary embodiment, the linear low noise amplifier may include a first metal oxide semiconductor field effect transistor (MOSFET) configured to operate in a triode mode coupled to a second MOSFET configured to operate in a saturation mode. Linearity of the low noise amplifier may be determined, at least in part, by a transconductance associated with the second MOSFET and a channel resistance associated the first MOSFET. | ||||||
| 12 | Amplifier with improved noise reduction | US14078050 | 2013-11-12 | US09225294B2 | 2015-12-29 | Wenchang Huang; Vijayakumar Dhanasekaran |
| An amplifier with improved noise reduction is disclosed. In an exemplary embodiment, an apparatus includes at least one capacitor configured to receive an adjustable current and generate a corresponding ramp voltage configured to control coupling between a main amplifier output and a secondary amplifier output. The apparatus also includes at least one comparator configured to adjust the adjustable current to generate the ramp voltage with selected ramp-up or ramp-down voltage characteristics. | ||||||
| 13 | Variable impedance device | US13601904 | 2012-08-31 | US08963559B2 | 2015-02-24 | Thomas Quemerais; Daniel Gloria; Romain Debroucke |
| A variable impedance device includes a passive tuner that includes at least one variable component, which is controllable to apply a variable impedance value to an input signal of the passive tuner. A low noise amplifier is configured to supply the input signal to the passive tuner by amplifying an input RF (radio frequency) signal. | ||||||
| 14 | AMPLIFIER WITH IMPROVED NOISE REDUCTION | US14078050 | 2013-11-12 | US20150002228A1 | 2015-01-01 | Wenchang Huang; Vijayakumar Dhanasekaran |
| An amplifier with improved noise reduction is disclosed. In an exemplary embodiment, an apparatus includes at least one capacitor configured to receive an adjustable current and generate a corresponding ramp voltage configured to control coupling between a main amplifier output and a secondary amplifier output. The apparatus also includes at least one comparator configured to adjust the adjustable current to generate the ramp voltage with selected ramp-up or ramp-down voltage characteristics. | ||||||
| 15 | Variable Impedance Device | US13601904 | 2012-08-31 | US20130099797A1 | 2013-04-25 | Thomas Quemerais; Daniel Gloria; Romain Debroucke |
| A variable impedance device includes a passive tuner that includes at least one variable component, which is controllable to apply a variable impedance value to an input signal of the passive tuner. A low noise amplifier is configured to supply the input signal to the passive tuner by amplifying an input RF (radio frequency) signal. | ||||||
| 16 | Multiband wireless device and semiconductor integrated circuit | US11769151 | 2007-06-27 | US07945232B2 | 2011-05-17 | Yoshikazu Sugiyama; Satoshi Adachi; Yusaku Katsube; Masazumi Tone; Taku Takaki |
| When switching over from a portable telephone system of 800 MHz band to a UWB communication system of 9 GHz band, depending upon a signal for changing over a high pass filter and a low pass filter, a reactance element, which is determined to be matching with a load Z of the high pass filter, is connected to an output terminal of a transmitting power amplifier. With this, it is possible to achieve a multi-band or multi-mode wireless receiver of using a frequency band from 800 MHz to 10 GHz, without an enlargement of a circuit scale and an increase of costs. | ||||||
| 17 | Magnetic head driving circuit with protection function | US11666274 | 2005-09-29 | US07839592B2 | 2010-11-23 | Shingo Hokuto; Yujiro Okamoto |
| A magnetic recording and reproducing device is a hard disk device which writes information onto a magnetic disk (not shown), or reads information therefrom, and includes: a reproducing head; a recording head; and a magnetic head driving circuit. The magnetic head driving circuit is a circuit, by which driving of the reproducing head and the recording head is controlled, and onto which the reproducing head, a recording head driving circuit, a control unit, and a variable impedance element are integrated. This magnetic head driving circuit is switched on a time division base to a read mode during reproducing operation, and to a write mode during recording operation. The control unit reduces the impedance of the variable impedance element during the write mode. | ||||||
| 18 | Filter calibration with cell re-use | US11430575 | 2006-05-09 | US07471142B2 | 2008-12-30 | Qiang (Tom) Li; Hooman Darabi |
| Various embodiments are disclosed relating filter calibration with cell re-use. According to an example embodiment, an apparatus includes a first circuit, including a variable circuit element. The first circuit is adapted to output an output frequency signal during a calibration mode and to operate as a filter during a filter mode. A control circuit is coupled to the first circuit and is adapted to receive a reference frequency signal and to calibrate the first circuit by adjusting the variable circuit element based on the reference frequency signal and the output frequency signal during the calibration mode. The calibrated first circuit is configured to then operate as a filter during the filter mode. | ||||||
| 19 | SEMICONDUCTOR DEVICE | US11874966 | 2007-10-19 | US20080290951A1 | 2008-11-27 | Akira Inoue; Seiki Goto; Kou Kanaya; Shinsuke Watanabe |
| A current limiting circuit is connected to the gate (input terminal) of an amplifying transistor. The current limiting circuit includes a protecting transistor, a first protecting resistor connecting the drain to the gate of the protecting transistor, and a second protecting resistor connecting the source to the gate of the protecting transistor. The current limiting circuit limits current, so that electric power larger than the maximum electric power allowable for the amplifying transistor does not pass. | ||||||
| 20 | Filter calibration with cell re-use | US11430575 | 2006-05-09 | US20070262813A1 | 2007-11-15 | Qiang Li; Hooman Darabi |
| Various embodiments are disclosed relating filter calibration with cell re-use. According to an example embodiment, an apparatus includes a first circuit, including a variable circuit element. The first circuit is adapted to output an output frequency signal during a calibration mode and to operate as a filter during a filter mode. A control circuit is coupled to the first circuit and is adapted to receive a reference frequency signal and to calibrate the first circuit by adjusting the variable circuit element based on the reference frequency signal and the output frequency signal during the calibration mode. The calibrated first circuit is configured to then operate as a filter during the filter mode. | ||||||
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