Linear low noise amplifier |
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| 申请号 | US15174856 | 申请日 | 2016-06-06 | 公开(公告)号 | US09887678B2 | 公开(公告)日 | 2018-02-06 |
| 申请人 | QUALCOMM Incorporated; | 发明人 | Amir Hossein Masnadi Shirazi Nejad; Mazhareddin Taghivand; Seyed Hossein Miri Lavasani; Mohammad Emadi; | ||||
| 摘要 | A linear low noise amplifier is disclosed. In at least one exemplary embodiment, the linear low noise amplifier may include a first metal oxide semiconductor field effect transistor (MOSFET) configured to operate in a triode mode coupled to a second MOSFET configured to operate in a saturation mode. Linearity of the low noise amplifier may be determined, at least in part, by a transconductance associated with the second MOSFET and a channel resistance associated the first MOSFET. | ||||||
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| 说明书全文 | |||||||
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