| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | INTERFERENCE REJECTION RF FILTERS | US14450200 | 2014-08-01 | US20150035622A1 | 2015-02-05 | George Maxim; Dirk Robert Walter Leipold; Baker Scott |
| RF communications circuitry includes an RF filter structure, which includes a group of resonators, a group of cross-coupling capacitive structures, and a group of egress/ingress capacitive structures, is disclosed. Each of the group of cross-coupling capacitive structures is coupled between two of the group of resonators. A first portion of the group of egress/ingress capacitive structures is coupled between a first connection node and the group of resonators. A second portion of the group of egress/ingress capacitive structures is coupled between a second connection node and the group of resonators. | ||||||
| 122 | NOISE CANCELING LOW-NOISE AMPLIFIER | US14375131 | 2013-01-25 | US20150035602A1 | 2015-02-05 | Sven Mattisson; Stefan Andersson |
| A noise-canceling LNA circuit for amplifying signals at an operating frequency f in a receiver circuit is disclosed. The LNA circuit comprises a first and a second amplifier branch, each having an input terminal connected to an input terminal of the LNA circuit. The first amplifier branch comprises an output terminal for supplying an output current of the first amplifier branch and a common source or common emitter main amplifier. The main amplifier has an input transistor having a first terminal, which is a gate or base terminal, operatively connected to the input terminal of the first amplifier branch, a shunt-feedback capacitor operatively connected between the first terminal of the input transistor and a second terminal, which is a drain or collector terminal, of the input transistor, and an output capacitor operatively connected between the second terminal of the input transistor and the output terminal of the first amplifier branch. The second amplifier branch comprises an output terminal for supplying an output current of the second amplifier branch. The LNA circuit comprises circuitry for combining the output current of the first amplifier branch and the output current of the second amplifier branch, thereby generating a total output current of the LNA circuit. | ||||||
| 123 | TUNABLE RF FILTER STRUCTURE FORMED BY A MATRIX OF WEAKLY COUPLED RESONATORS | US14298829 | 2014-06-06 | US20140361848A1 | 2014-12-11 | Dirk Robert Walter Leipold; George Maxim; Baker Scott |
| RF filter structures are disclosed that may have multiple filter paths, which are provided by weakly coupled resonators. The filter paths may be interconnected so that additional filter paths may be realized between input and output terminals of the RF filter structures. In this manner, the weakly coupled resonators from the filter paths may be arranged in a matrix. In one embodiment, an RF filter structure includes a first filter path and a second filter path. The first filter path includes (at least) a first pair of weakly coupled resonators while a second filter path that includes (at least) a second pair of weakly coupled resonators. To interconnect the first filter path and the second filter path, a cross-coupling capacitive structure is electrically connected between the first filter path and the second filter path. As such, an additional filtering path may be realized through the interconnection provided by the cross-coupling capacitive structure. | ||||||
| 124 | NONLINEAR CAPACITANCE LINEARIZATION | US14298872 | 2014-06-06 | US20140361839A1 | 2014-12-11 | Baker Scott; George Maxim; Dirk Robert Walter Leipold; Christian Rye Iversen; Eric K. Bolton; Daniel Charles Kerr |
| An apparatus, which includes a first electronic device, a first nonlinear capacitance compensation circuit, and a capacitance compensation control circuit, is disclosed. The first electronic device has a first nonlinear capacitance and is coupled to the first nonlinear capacitance compensation circuit, which has a first compensation capacitance and receives a first compensation control signal. The capacitance compensation control circuit adjusts the first compensation capacitance using the first compensation control signal to at least partially linearize the first nonlinear capacitance. | ||||||
| 125 | INTEGRATED CIRCUIT | US14050834 | 2013-10-10 | US20140035683A1 | 2014-02-06 | Yosuke OGASAWARA |
| According to one embodiment, provided are an amplifier transistor configured to amplify an input signal; a biasing circuit configured to set a bias voltage in such a manner as to allow the amplifier transistor to perform amplification; an electrostatic protective circuit configured to set the bias voltage for the amplifier transistor in such a manner as to make the amplifier transistor to turn off based on voltage to be applied to the amplifier transistor; and a switching circuit configured to switch the bias voltage for the amplifier transistor based on a power supply condition. | ||||||
| 126 | Integrated circuit | US13422239 | 2012-03-16 | US08581666B2 | 2013-11-12 | Yosuke Ogasawara |
| According to one embodiment, provided are an amplifier transistor configured to amplify an input signal; a biasing circuit configured to set a bias voltage in such a manner as to allow the amplifier transistor to perform amplification; an electrostatic protective circuit configured to set the bias voltage for the amplifier transistor in such a manner as to make the amplifier transistor to turn off based on voltage to be applied to the amplifier transistor; and a switching circuit configured to switch the bias voltage for the amplifier transistor based on a power supply condition. | ||||||
| 127 | AUDIO AMPLIFIER USING MULTI-LEVEL PULSE WIDTH MODULATION | US13881509 | 2011-10-27 | US20130223651A1 | 2013-08-29 | Mikkel Høyerby |
| The present invention relates in one aspect to a class D audio amplifier with improved output driver topology supporting multi-level output signals such as 3-level, 4-level or 5-level pulse width or pulse density modulated output signals for application to a loudspeaker load. The present class D audio amplifiers are particularly well-suited for high-volume consumer audio applications and solutions. | ||||||
| 128 | Class D power amplifier | US13106611 | 2011-05-12 | US08373504B2 | 2013-02-12 | Baher Haroun; Joonhoi Hur; Lei Ding; Rahmi Hezar |
| A class D power amplifier (PA) is provided. The PA generally comprises a driver, output capacitor, a matching network, and a cancellation circuit. The driver has an input, an output, and a parasitic capacitance, and the input of the driver is configured to receive complementary first and second radio frequency (RF) signals, where there is a free-fly interval between consecutive pulses from the first and second RF signals. The output capacitor and cancellation circuit are each coupled to the output of the driver such that the cancellation circuit provides harmonic restoration at least during the free-fly interval, and the matching network is coupled to the output capacitor. | ||||||
| 129 | Distributed amplifier with improved stabilization | US13385772 | 2012-03-06 | US20120229216A1 | 2012-09-13 | Keith Benson |
| A distributed amplifier with improved stabilization includes an input transmission circuit, an output transmission circuit, at least one cascode amplifier coupled between said input and output transmission circuits. Each cascode amplifier includes a common-gate configured transistor coupled to the output transmission circuit, and a common-source configured transistor coupled between the input transmission circuit and the common-gate configured transistor. The distributed amplifier also includes a non-parasitic resistance and capacitance coupled in series between a drain and a gate of at least one of the common-gate configured transistors for increasing the amplifier stability. | ||||||
| 130 | FAST STARTUP BIAS CURRENT GENERATOR | US15891221 | 2018-02-07 | US20190245499A1 | 2019-08-08 | Pranav Kotamraju |
| A bias current generator is disclosed that include an operational amplifier that is self-biased during an inactive period with a bias current to bias a gate of an output transistor. Since the inactive period bias is close to an active period bias applied to the gate of the output transistor during active operation of the bias current generator, the speed of transition from the inactive period to the active period is enhanced by the self-biasing of the operational amplifier. | ||||||
| 131 | CURRENT DETECTION CIRCUIT | US16118150 | 2018-08-30 | US20190242929A1 | 2019-08-08 | Hiroshi YOSHINO |
| A current detection circuit has a differential amplification circuit that outputs a differential output current dependent on a voltage difference between input terminals and first and second feedback circuits that output a detection current in response to the differential output current and form a feedback path to each input terminal of the differential amplification circuit. First and second MOS transistors that generate voltages dependent on respective source-drain voltages at a time when drain currents in a forward direction and a backward direction flow through an output MOS transistor are connected to respective input terminals of the differential amplification circuit. | ||||||
| 132 | DIFFERENTIAL HARD-SWITCHING RADIO FREQUENCY (RF) POWER AMPLIFIER | US15872528 | 2018-01-16 | US20190222183A1 | 2019-07-18 | Chi-Fung KWOK |
| A radio frequency (RF) front-end (RFFE) may include a differential hard-switching RF power amplifier. The RFFE may also include a ground bounce circuit coupled to the differential hard-switching RF power amplifier. | ||||||
| 133 | AUDIO AMPLIFIERS | US15993990 | 2018-05-31 | US20180351516A1 | 2018-12-06 | John Paul LESSO |
| This application relates to audio driving circuits having good audio performance. The circuit (301) has a forward signal path between an input (103) for receiving an input audio signal (SIN) and an output (104) for outputting an output signal (SOUT) with an amplifier module (102) in the forward signal path. An error block (302) is arranged to receive a first signal (SFF) derived from the input signal and also a second signal (SFB) derived from the output signal and determine a first error signal (ε1) indicative of a difference between the first and second signals. A first processing module (204) is operable to generate a compensation signal (SC) to be applied to the input signal (SIN) upstream of the amplifier module (102) based on the first error signal. The error block (302) comprises a second processing module (303/303a) configured to apply a linear transfer function to one of the first signal or the second signals prior to determining the first error signal. In some embodiments the second processing module may apply a linear transfer function which is adaptive based on a second error signal (ε2) indicative of the error between the first and second signals after the linear transfer function has been applied. | ||||||
| 134 | POWER AMPLIFIER CIRCUIT | US15967914 | 2018-05-01 | US20180342992A1 | 2018-11-29 | Hideyuki SATO |
| A power amplifier circuit includes a first amplifier transistor, an input signal being supplied to a base of the first amplifier transistor, a first amplification signal obtained by amplifying the input signal being output from a collector of the first amplifier transistor; a first bias circuit that supplies a first current or a first voltage to the base of the first amplifier transistor; a second bias circuit that supplies a second current or a second voltage to the base of the first amplifier transistor; and a first resistor element that is connected in series between the base of the first amplifier transistor and the first bias circuit. The second bias circuit includes a diode, an impedance circuit, and a first capacitor element. | ||||||
| 135 | LC Network for a Power Amplifier with Selectable Impedance | US16035045 | 2018-07-13 | US20180342990A1 | 2018-11-29 | Saurabh Goel; Richard Wilson; Haedong Jang |
| Exemplary embodiments including an amplifier circuit that includes a radio-frequency (RF) amplifier comprising an input terminal and an output terminal, the RF amplifier being configured to amplify, across a wideband frequency range, an RF signal applied to the input terminal to generate an amplified RF signal at the output terminal. The amplifier circuit also includes a first impedance matching network connected to the RF amplifier output terminal. The first impedance matching network includes a first reactive circuit, having substantially fixed impedance, connected between the RF amplifier input terminal and ground; a second reactive circuit; and a switching device configured to couple the second reactive circuit to the first reactive circuit in an ON state, and to decouple the second reactive circuit from the first reactive circuit in an OFF state. In some embodiments, the amplifier circuit can include a second impedance matching network connected to the RF amplifier input terminal. | ||||||
| 136 | CURRENT MIRROR DEVICE AND RELATED AMPLIFIER CIRCUIT | US15810148 | 2017-11-13 | US20180329443A1 | 2018-11-15 | Chih-Sheng Chen; Tien-Yun Peng |
| A current mirror device includes an input end for receiving an input signal, an output end for outputting an amplified signal of the input signal, first through third transistors, and an operational amplifier. The first transistor includes a first end coupled to first reference current and a second end coupled to a bias voltage. The control end of the second transistor is coupled to the input end. The third transistor includes a first end coupled to the output end, a second end coupled to the first end of the second transistor and a control end coupled to a reference voltage. The operational amplifier is configured to keep a first voltage and a second voltage at substantially the same level, wherein the first voltage is obtained on the first end of the first transistor and the second voltage is obtained on the first end of the second transistor. Therefore, the reference current flowing through the first transistor can be accurately amplified to a desired value and mirrored to become load current flowing through the second transistor. | ||||||
| 137 | Distributed amplifier with improved stabilization | US15240580 | 2016-08-18 | US10122325B2 | 2018-11-06 | Keith Benson |
| A distributed amplifier with improved stabilization includes an input transmission circuit, an output transmission circuit, at least one cascode amplifier coupled between said input and output transmission circuits. Each cascode amplifier includes a common-gate configured transistor coupled to the output transmission circuit, and a common-source configured transistor coupled between the input transmission circuit and the common-gate configured transistor. The distributed amplifier also includes a non-parasitic resistance and capacitance coupled in series between a drain and a gate of at least one of the common-gate configured transistors for increasing the amplifier stability. | ||||||
| 138 | DISTORTION COMPENSATION CIRCUIT | US15762300 | 2015-11-18 | US20180316317A1 | 2018-11-01 | Yuji KOMATSUZAKI; Yuichi FUJIMOTO; Jun NISHIHARA; Kazuhiro IYOMASA; Koji YAMANAKA |
| A distributor distributes an input signal to a first transmission line and a second transmission line. A high-pass filter, a first linearizer, and a first phase shifter disposed on the first transmission line adjust the phase and amplitude of an intermodulation distortion in a low-frequency range. A low-pass filter, a second linearizer, and a second phase shifter disposed on the second transmission line adjust the phase and amplitude of an intermodulation distortion in a high-frequency range. A synthesizer synthesizes the signal from the first transmission line and the signal from the second transmission line. | ||||||
| 139 | INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH | US15487112 | 2017-04-13 | US20180302046A1 | 2018-10-18 | James E. MITZLAFF |
| A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate. | ||||||
| 140 | AMPLIFIER, AUDIO SIGNAL OUTPUT METHOD, AND ELECTRONIC DEVICE | US15763905 | 2016-09-29 | US20180278217A1 | 2018-09-27 | SACHIO AKEBONO |
| The present technology relates to an amplifier, an audio signal output method, and an electronic device that can inhibit unintended sound output in a class D amplifier that changes a peak value of a PWM signal. The amplifier includes: a positive-side amplitude generating circuit configured to generate positive-side amplitude of an output PWM signal that is a PWM signal to be output outside an apparatus; a negative-side amplitude generating circuit configured to generate negative-side amplitude of the output PWM signal; and a feedback circuit configured to feed back a difference between the amplitude generated by the positive-side amplitude generating circuit and the amplitude generated by the negative-side amplitude generating circuit to the positive-side amplitude generating circuit and the negative-side amplitude generating circuit. The present technology is applicable, for example, to an amplifier or the like of an electronic device such as an audio player. | ||||||
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