| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 161 | Noise canceling low-noise amplifier | US14375131 | 2013-01-25 | US09413301B2 | 2016-08-09 | Sven Mattisson; Stefan Andersson |
| A noise-canceling LNA circuit for amplifying signals at an operating frequency f in a receiver circuit is disclosed. The LNA circuit comprises a first and a second amplifier branch, each having an input terminal connected to an input terminal of the LNA circuit. The first amplifier branch comprises an output terminal for supplying an output current of the first amplifier branch and a common source or common emitter main amplifier. The main amplifier has an input transistor having a first terminal, which is a gate or base terminal, operatively connected to the input terminal of the first amplifier branch, a shunt-feedback capacitor operatively connected between the first terminal of the input transistor and a second terminal, which is a drain or collector terminal, of the input transistor, and an output capacitor operatively connected between the second terminal of the input transistor and the output terminal of the first amplifier branch. The second amplifier branch comprises an output terminal for supplying an output current of the second amplifier branch. The LNA circuit comprises circuitry for combining the output current of the first amplifier branch and the output current of the second amplifier branch, thereby generating a total output current of the LNA circuit. | ||||||
| 162 | Circuit to reduce output capacitor of LDOs | US14477079 | 2014-09-04 | US09395731B2 | 2016-07-19 | Ambreesh Bhattad |
| Circuits and methods to reduce the size of output capacitors of LDOs or amplifiers are disclosed. Nonlinear mirroring of the load current allows scaling of gain or adapting small signal impedance of a pass transistor depending on other inputs, in case of a preferred embodiment, allows to reduce small signal impedance at the gate of the pass transistor as the load current increases, hence allowing to reduce the size of an output capacitor without compromising stability of the system. | ||||||
| 163 | MULTI-MODE POWER AMPLIFIER | US14975621 | 2015-12-18 | US20160181989A1 | 2016-06-23 | Ying Shi; Jinghang Feng |
| A power amplifier module that includes a power amplifier and a controller is presented herein. The power amplifier module may include a set of transistor stages and a plurality of bias circuits. At least one transistor stage from the set of transistor stages may be in electrical communication with a first bias circuit and a second bias circuit from the plurality of bias circuits. The first bias circuit can be configured to apply a first bias voltage to the at least one transistor stage and the second bias circuit can be configured to apply a second bias voltage to the at least one transistor stage. The controller may be configured to activate one of the first bias circuit and the second bias circuit. | ||||||
| 164 | RADIO FREQUENCY DEVICES WITH SURFACE-MOUNTABLE CAPACITORS FOR DECOUPLING AND METHODS THEREOF | US15044701 | 2016-02-16 | US20160164471A1 | 2016-06-09 | Mahesh K. SHAH; Jerry L. WHITE; Li LI; Hussain H. LADHANI; Audel A. SANCHEZ; Lakshminarayan VISWANATHAN; Fernando A. SANTOS |
| An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply. | ||||||
| 165 | Multi-mode power amplifier | US14091155 | 2013-11-26 | US09246443B2 | 2016-01-26 | Ying Shi; Jinghang Feng |
| A power amplifier module that includes a power amplifier and a controller is presented herein. The power amplifier module may include a set of transistor stages and a plurality of bias circuits. At least one transistor stage from the set of transistor stages may be in electrical communication with a first bias circuit and a second bias circuit from the plurality of bias circuits. The first bias circuit can be configured to apply a first bias voltage to the at least one transistor stage and the second bias circuit can be configured to apply a second bias voltage to the at least one transistor stage. The controller may be configured to activate one of the first bias circuit and the second bias circuit. | ||||||
| 166 | Capacitive transimpedance amplifier with offset | US14401277 | 2013-05-31 | US09228979B2 | 2016-01-05 | John Patrick Fitzgerald |
| Spectrometers including integrated capacitive detectors are described. An integrated capacitive detector integrates ion current from the collector (768) into a changing voltage. The detector includes a collector configured to receive ions in the spectrometer, a dielectric, and a plate arranged in an overlapping configuration with collector on an opposite side of the dielectric. The detector also includes an amplifier (764). A capacitive detector with offset (776) is described. | ||||||
| 167 | Current amplifier circuit, integrator, and ad converter | US14538212 | 2014-11-11 | US09225351B2 | 2015-12-29 | Tetsuro Itakura; Masanori Furuta; Akihide Sai; Junya Matsuno; Yohei Hatakeyama |
| In one embodiment, a current amplifier circuit includes a first transistor, a first resistor, a second transistor, a second resistor, a first passive element, and a control circuit. The first transistor has a first terminal, a second terminal, and a control terminal. The first resistor has one end connected to the first terminal of the first transistor. The second transistor has a first terminal, a second terminal, and a control terminal. The second resistor has one end connected to the first terminal of the second transistor. The first passive element is connected between the first terminals of the first transistor and the second transistor. The control circuit controls at least one of voltage at the control terminals of the first transistor and the second transistor such that the voltage at the other end of the first resistor becomes equal to the voltage at the other end of the second resistor. | ||||||
| 168 | LOW PASS FILTER WITH COMMON-MODE NOISE REDUCTION | US14259120 | 2014-04-22 | US20150303880A1 | 2015-10-22 | Tzu-Hsuin Peng; Chih-Hong Lou; Chao-Hsin Lu; Chi-Yun Wang; Chih-Jung Chen |
| A low pass filter includes a first amplifier stage and a second amplifier stage. The first amplifier stage includes a differential operational amplifier, wherein the first amplifier stage is arranged to process a differential input signal to generate a differential intermediate signal, the differential input signal having a first input signal and a second input signal, and the differential intermediate signal having a first intermediate signal and a second intermediate signal. The second amplifier stage has no common-mode feedback and is arranged to process the differential intermediate signal to generate a differential output signal, wherein the differential output signal has a first output signal corresponding to the first input signal and a second output signal corresponding to the second input signal. Since the noisy common-mode feedback is removed from the second amplifier stage, the overall common-mode noise of the low pass filter can be decreased. | ||||||
| 169 | CAPACITIVE PROGRAMMABLE GAIN AMPLIFIER | US14242285 | 2014-04-01 | US20150280668A1 | 2015-10-01 | Wenchang Huang; Peter Jivan Shah; Meysam Azin; Arash Mehrabi |
| An apparatus includes an operational amplifier and a plurality of capacitors coupled to an input terminal of the operational amplifier and configured to be selectively coupled to receive one of an input voltage signal and an output voltage signal of the operational amplifier. | ||||||
| 170 | DUAL FEEDBACK LOW NOISE AMPLIFIER | US14275077 | 2014-05-12 | US20150214900A1 | 2015-07-30 | Tzyy-Sheng Horng; Rong-Fu Ye; Jian-Ming Wu |
| A dual feedback low noise amplifier includes a negative-feedback capacitive mutual-coupled common-gate amplifier of parallel-input parallel-output (PIPO) composed of a first transistor, a second transistor, a first coupling capacitor and a second coupling capacitor and a positive-feedback common-gate amplifier of parallel-input parallel-output (PIPO) composed of the first transistor, the second transistor, a first transformer and a second transformer. By means of dual feedback, the transconductance gain of the dual feedback low noise amplifier is increased, and the noise figure of the dual feedback low noise amplifier is decreased. | ||||||
| 171 | DOHERTY AMPLIFIER | US14526069 | 2014-10-28 | US20150145601A1 | 2015-05-28 | Xavier Moronval; Gerard Jean-Louis Bouisse; Jean-Jacques Bouny |
| The invention relates to a Doherty amplifier for amplifying an input signal at an operating frequency, comprising: a main amplifier; a first peak amplifier; a second peak amplifier, each of the amplifiers comprising an input for receiving the input signal and an output for providing an amplified signal, a plurality of peak amplifiers, each of the amplifiers comprising an input for receiving the input signal and an output for providing an amplified signal; a first input phase shifter; a second input phase shifter; a first capacitor coupled between the source and drain of the first peak amplifier; a first output phase shifter and a second output phase shifter. | ||||||
| 172 | CURRENT AMPLIFIER CIRCUIT, INTEGRATOR, AND AD CONVERTER | US14538212 | 2014-11-11 | US20150130647A1 | 2015-05-14 | Tetsuro ITAKURA; Masanori FURUTA; Akihide SAI; Junya MATSUNO; Yohei HATAKEYAMA |
| In one embodiment, a current amplifier circuit includes a first transistor, a first resistor, a second transistor, a second resistor, a first passive element, and a control circuit. The first transistor has a first terminal, a second terminal, and a control terminal. The first resistor has one end connected to the first terminal of the first transistor. The second transistor has a first terminal, a second terminal, and a control terminal. The second resistor has one end connected to the first terminal of the second transistor. The first passive element is connected between the first terminals of the first transistor and the second transistor. The control circuit controls at least one of voltage at the control terminals of the first transistor and the second transistor such that the voltage at the other end of the first resistor becomes equal to the voltage at the other end of the second resistor. | ||||||
| 173 | VSWR DETECTOR FOR A TUNABLE FILTER STRUCTURE | US14450028 | 2014-08-01 | US20150038094A1 | 2015-02-05 | George Maxim; Dirk Robert Walter Leipold; Baker Scott |
| Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR. | ||||||
| 174 | ADVANCED 3D INDUCTOR STRUCTURES WITH CONFINED MAGNETIC FIELD | US14450156 | 2014-08-01 | US20150035637A1 | 2015-02-05 | George Maxim; Dirk Robert Walter Leipold; Baker Scott |
| Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components. | ||||||
| 175 | COOPERATIVE TUNABLE RF FILTERS | US14449913 | 2014-08-01 | US20150035617A1 | 2015-02-05 | Dirk Robert Walter Leipold; George Maxim; Baker Scott; Nadim Khlat; Jayanti Jaganatha Rao |
| RF communications circuitry, which includes a first tunable RF filter and a second tunable RF filter, is disclosed. The first tunable RF filter is coupled to the second tunable RF filter. The RF communications circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the second tunable RF filter receives and filters an upstream RF signal to provide a filtered RF signal. Further, during the first operating mode, the first tunable RF filter augments a frequency response of the second tunable RF filter. | ||||||
| 176 | CALIBRATION FOR A TUNABLE RF FILTER STRUCTURE | US14449764 | 2014-08-01 | US20150035612A1 | 2015-02-05 | George Maxim; Dirk Robert Walter Leipold; Baker Scott |
| Embodiments of radio frequency (RF) front-end circuitry are disclosed where the RF front-end circuitry includes a tunable RF filter structure and a calibration circuit. The tunable RF filter structure includes (at least) a pair of weakly coupled resonators and defines a transfer function with a passband. The calibration circuit is configured to shape the passband so that the passband defines a center frequency. Additionally, the calibration circuit is configured to detect a phase difference at the target center frequency between the pair of weakly coupled resonators and adjust the phase difference of the pair of weakly coupled resonators at the target center frequency so as to reduce a frequency displacement between the center frequency of the passband and the target center frequency. In this manner, the calibration circuit calibrates the tunable RF filter structure to correct for errors in the center frequency of the passband due to component manufacturing variations. | ||||||
| 177 | HIGH QUALITY FACTOR INTERCONNECT FOR RF CIRCUITS | US14298834 | 2014-06-06 | US20140361856A1 | 2014-12-11 | Dirk Robert Walter Leipold; Baker Scott; George Maxim |
| Embodiments of radio frequency (RF) devices are disclosed having interconnection paths with capacitive structures having improved quality (Q) factors. In one embodiment, an RF device includes an inductor having an inductor terminal and a semiconductor die. The semiconductor die includes one or more active semiconductor devices that include a device contact. The device contact provided by the one or more active semiconductor devices is positioned so as to be vertically aligned directly below the inductor terminal. The inductor terminal and the device contact are electrically connected with an interconnection path that includes a capacitive structure. To prevent or reduce current crowding, the interconnection path is vertically aligned so as to extend directly between the inductor terminal and the device contact. In this manner, the interconnection path electrically connects the inductor terminal and the device contact without degrading the Q factor of the RF device. | ||||||
| 178 | TUNABLE RF FILTER PATHS FOR TUNABLE RF FILTER STRUCTURES | US14298830 | 2014-06-06 | US20140361852A1 | 2014-12-11 | Dirk Robert Walter Leipold; George Maxim; Baker Scott |
| This disclosure relates generally to radio frequency (RF) filter structures. In one embodiment, an RF filter structure includes a first resonator and a second resonator. The second resonator is operably associated with the first resonator such that an energy transfer factor between the first resonator and the second resonator is less than 10%. The first resonator includes a first inductor and a first capacitive structure electrically connected to the first inductor, while the second resonator has a second inductor and a second capacitive structure electrically connected to the second inductor. A displacement between the first inductor and the second inductor is less than or equal to half a maximum lateral width of the second inductor. To set an electric coupling coefficient, a first cross-coupling capacitive structure is electrically connected between the first resonator and the second resonator. | ||||||
| 179 | Distributed amplifier with improved stabilization | US13385772 | 2012-03-06 | US08786368B2 | 2014-07-22 | Keith Benson |
| A distributed amplifier with improved stabilization includes an input transmission circuit, an output transmission circuit, at least one cascode amplifier coupled between said input and output transmission circuits. Each cascode amplifier includes a common-gate configured transistor coupled to the output transmission circuit, and a common-source configured transistor coupled between the input transmission circuit and the common-gate configured transistor. The distributed amplifier also includes a non-parasitic resistance and capacitance coupled in series between a drain and a gate of at least one of the common-gate configured transistors for increasing the amplifier stability. | ||||||
| 180 | Drain Sharing Split LNA | US15887816 | 2018-02-02 | US20190245497A1 | 2019-08-08 | Miles Sanner; Emre Ayranci |
| A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the gm of the input stage of the amplifier, thus improving the noise figure of the amplifier. | ||||||
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