Gunn effect phase modulator专利检索-脉冲电场电场物理专利检索查询-专利查询网

Gunn effect phase modulator

阅读：624发布：2023-07-09

专利汇可以提供Gunn effect phase modulator专利检索，专利查询，专利分析的服务。并且A Gunn effect triode is modified to provide a phase modulator. It may, for example, generate a phase modulated output and may be used in a microwave modulator. It consists basically of a main branch and two side branches, each being biased below the threshold electric field. Domain nucleation is initiated by a trigger or input pulse applied to the main branch and the pulse may be diverted by triggered gates into a selected one of the two side branches. The effective length of each side branch is such that the desired phase modulated output pulse may be obtained from a selected one of the two side branches. The two output signals may, for example, be 0* and 180* out of phase or alternatively 90* and 270* out of phase with respect to the input pulse.，下面是Gunn effect phase modulator专利的具体信息内容。

权利要求

1. A Gunn effect phase modulator comprising: a. a substrate of semi-insulating material; b. a semiconductive material disposed on said substrate, said semiconducting material exhibiting the Gunn effect and having differential negative resistance and capable of domain nucleation; c. said semiconductive material having a main branch and two side branches substantially parallel to each other and to said main branch, each of said side branches being connected to said main branch by an interconnecting portion; d. each of said three branches having two ohmic electrodes; e. means for biasing said ohmic electrodes to provide a cathode and an anode and to create an electric field in said semiconduction material below the threshold field where domain nucleation begins; f. a Schottky barrier electrode disposed near the cathode of said main branch and a Schottky barrier electrode on each of said interconnecting portions; g. means for applying an input trigger pulse to said Schottky electrode of said main branch having a magnitude sufficient together with said electric field to initiate domain nucleation whereby a dipole domain is formed in said main branch; h. means for applying a gating pulse to a selected one of the Schottky electrode of said interconnecting portions whereby the launched dipole domain will either propagate in one or the other of said side branches, said side branches having each a predetermined length with respect to the length of said main branch, whereby an output pulse may be obtained at the anode of one of said side branches having a predetermined phase relationship with the input pulse.

2. A phase modulator as defined in claim 1 wherein said substrate consists of gallium arsenide and wherein said semiconducting material consists of n-type, doped gallium arsenide.

3. A phase modulator as defined in claim 2 wherein one of said interconnecting portions is spaced from the cathode of said main branch by 1/4 of the wavelength of the oscillations in said main branch while the other one of said interconnecting portions is spaced from the cathode of said main branch by 3/4 of said wavelength.

4. A phase modulator as defined in claim 3 wherein one of said side branches has an effective length equal to that of said main branch while the other one of said side branches has an effective length of one and a half times that of said main branch, whereby the phase of the output pulses obtained from said side branches are respectively 0* and 180* out of phase with respect to the phase of the input pulse.

5. A phase modulator as defined in claim 3 wherein one of said side branches has an effective length of one and one quarter that of said main branch while the other one of said side branches has a length of one and three quarters that of said main branch, whereby the output signals obtained from said side branches are respectively 90* and 270* out of phase with respect to that of the input pulse.

6. A phase modulator as defined in claim 2 wherein a series of equally spaced trigger pulses is applied to the Schottky electrode of said main branch.

7. A phase modulator as defined in claim 2 wherein data pulses are applied simultaneously to both of the Schottky electrodes of said interconnecting portion, whereby a selected one of said side branches is gated.

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