Electrically erasable floating gate fet memory cell专利检索-脉冲电场电场物理专利检索查询-专利查询网

Electrically erasable floating gate fet memory cell

阅读：547发布：2023-07-07

专利汇可以提供Electrically erasable floating gate fet memory cell专利检索，专利查询，专利分析的服务。并且A read-mostly memory cell is disclosed comprising a floating gate avalanche injection field effect transistor storage device equipped with an erasing electrode. The memory portion of the erasable storage devices comprises a P channel FET having a floating polycrystalline silicon gate separated from an N-doped substrate by a layer of silicon dioxide. The erasing portion of the device comprises an erasing electrode separated from the polycrystalline silicon floating gate by a thermally grown layer of silicon dioxide having a leakage characteristic which is low in the presence of low electrical fields and high in the presence of high electrical fields. The floating gate is heavily doped with boron which also partially dopes the thermally grown silicon dioxide layer. The floating gate is charged negatively by avalanche breakdown of the FET drain while the erase gate is grounded to the substrate. The floating gate is discharged (erased) upon the application of a positive pulse to the erase electrode with respect to the semiconductor substrate causing electrodes on the charged floating gate to leak through the thermal oxide to the erasing electrode.，下面是Electrically erasable floating gate fet memory cell专利的具体信息内容。

权利要求

1. A memory cell comprising a monocrystalline semiconductor substrate of one conductivity type, a pair of surface impurity regions of the other impurity type in said substrate, a first insulating layer on said substrate extending between said regions, a boron doped polycrystalline semiconductor member on said first layer, a second insulating layer on said member, said second layer comprising boron doped silicon oxide characterized by lower leakage conduction at lower impressed electric field values and higher leakage conduction at higher impressed electric field values, a conductive electrode on said second layer, means for selectively reverse biasing at least one of said regions with respect to said substrate to cause avalanching of the junction between said one region and said substrate to charge said member, and means for applying a voltage pulse to said electrode relative to said substrate to cause leakage conduction through said second layer to discharge said member, the polarity of said voltage pulse on said electrode being opposite to the polarity of charge on said member.

2. The memory cell defined in clain 1 wherein said first layer is thermally grown silicon oxide.

3. The memory cell defined in claim 1 wherein said first layer is about 800A thick and said second layer is about 1,000A thick.

4. The memory cell defined in claim 1 wherein said voltage pulse is at least 1 millisecond in duration.

5. The memory cell defined in claim 1 wherein the capacitance of the capacitor formed by said electrode, said second layer and said member is smaller than the capacitance of the capacitor formed by said member, said first layer and said substrate.

6. The memory cell defined in claim 1 wherein said one conductivity is N-type.

说明书全文

相关专利内容

标题	发布/更新时间	阅读量
一种基于双光梳光谱技术的温度和浓度测量系统和方法	2020-05-08	911
一种基于Cu衬底基GaN整流器及其制备方法	2020-05-11	141
一种离子迁移速度补偿的离子迁移谱仪及方法	2020-05-08	793
一种温湿调控细颗粒物高效脱除的装置及方法	2020-05-08	153
一种电脉冲辅助高铬冷作模具钢渗氮的处理方法	2020-05-08	339
操纵带电粒子的装置	2020-05-11	495
一种产生椭偏阿秒脉冲的方法及装置	2020-05-11	93
镀膜设备	2020-05-11	168
一种增强果酒酒石稳定性的方法	2020-05-11	263
一种青花椒油的制取方法	2020-05-11	975

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。

申请试用

脉冲电场热门专利

热门分类

Electrically erasable floating gate fet memory cell

该功能需要专业版企业版VIP权限，您可以：