One transistor dynamic memory cell
阅读：346发布：2022-07-09
专利汇可以提供One transistor dynamic memory cell专利检索，专利查询，专利分析的服务。并且A dynamic memory storage cell requires only one field effect transistor to store binary data. The data is represented in the form of stored charge utilizing the inherent metal-insulatorsemiconductor capacitance and P-N junction capacitance at the source node of the field-effect transistor. An extended portion of the source diffusion in combination with overlying thin oxide and metal layers form a capacitor that further enhances charge storage. A matrix of the memory cells form an extremely high density random access memory.，下面是One transistor dynamic memory cell专利的具体信息内容。
1. A dynamic data storage system comprising in combination: a. a row and column matrix of dynamic storage cells, each cell being capable of storing binary data in the form of stored charge, respective cells including a single field-effect transistor, the gate of which is connected to a row enable line, the drain of which is connected to a column enable line and an extended portion of the source of which forms one plate of a capacitor coupling said source to circuit ground, the drains of all field-effect transistors of storage cells in a column being commonly connected and the gates of all FETs of storage cells in a row being commonly connected, a low resistivity region underlying the extended portion of the source to enhance capacitance between source and circuit ground; b. decoding means for randomly addressing selected cells; c. circuit means coupled to said decoding means for refreshing the charge stored in each cell of said matrix during each operating cycle; and d. input/output means for selectively writing information into and reading information from said matrix.
2. A dynamic data storage system as set forth in claim 1 wherein said decoding means includes a field-effect transistor connected in series with each column data input line, each transistor having a gate for selectively biasing on the column data line associated therewith.
3. A dynamic data storage system comprising in combination: a. a row and column matrix of dynamic storage cells, each cell being capable of storing binary data in the form of stored charge, respective cells including a single field-effect transistor, the gate of which is connected to a row enable line, the drain of which is connected to a column enable line and an extended portion of the source of which forms one plate of a capacitor coupling said source to circuit ground, the drains of all field-effect transistors of storage cells in a column being commonly connected and the gates of all FETs of storage cells in a row being commonly connected; b. decoding means for randOmly addressing selected cells; c. circuit means coupled to said decoding means for refreshing the charge stored in each cell of said matrix during each operating cycle; and d. input/output means for selectively writing information into and reading information from said matrix; and e. said refreshing circuit means comprises for each column data line: i. a first FET, one node of which is coupled to a voltage source and the gate of which is connected to first clocking means; ii. a second transistor connected in series with the other node of said first transistor, the second node of said second transistor being connected to circuit ground and the juncture of said first and second transistors being connected to said column data line; iii. a third transistor having one node connected to a voltage source and a gate electrode connected to a second clocking means; iv. a fourth field-effect transistor, the source and drain of which are connected in series between the other node of said third transistor and circuit ground and the gate of which is connected to said column data line, the juncture of said third and fourth transistors being connected to the gate of said second transistor; and v. a fifth FET, the source and drain of which are connected in parallel to the source and drain of said fourth transistor and the gate of which is connected to said first clocking means.
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 基于人-车-路耦合振动模型的动力响应预测方法及系统 | 2020-05-08 | 679 |
| 一种基于P300的视听双通道竞争机制脑-机接口方法 | 2020-05-11 | 848 |
| 一种导电结构及其制备方法、触摸面板及显示装置 | 2020-05-11 | 698 |
| 基于非线性疲劳累积损伤机理退化-冲击模型的建模方法 | 2020-05-11 | 60 |
| 一种人工智能在季节性负荷预测中的应用方法 | 2020-05-12 | 420 |
| 一种卫星轨道机动状态实时监测方法 | 2020-05-13 | 846 |
| 一种毫米波蜂窝网络的小区间干扰协调方法 | 2020-05-13 | 139 |
| 一种面向电力通信网的业务运行的业务路由寻址方法 | 2020-05-13 | 250 |
| 一种考虑信息系统作用的有源配电网多视角协同脆弱性评估方法 | 2020-05-14 | 407 |
| 一种基于建模仿真的化学电池储能应用分析方法 | 2020-05-13 | 901 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
分析报告
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
QQ群二维码
意见反馈
意见反馈