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Stabilization of radiation detectors

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专利汇可以提供Stabilization of radiation detectors专利检索,专利查询,专利分析的服务。并且After the usual etching and quenching, a coaxial, lithiumdrifted germanium semiconductor radiation detector is dried in an ambient atmosphere of less than 40 percent relative humidity. The detector is placed in a cryostat under a substantial vacuum, cooled substantially to the temperature of dry ice, and maintained under a continuous reverse bias. The reverse bias gives rise to a reverse leakage current through the detector, which decreases as the resistance of the detector increases. When the leakage current reaches a minimum value, the detector is further cooled, still under a reverse bias, substantially to the temperature of liquid nitrogen. This process stabilizes the fullenergy peak efficiency of the detector.,下面是Stabilization of radiation detectors专利的具体信息内容。

1. A method of stabilizing the full-energy peak efficiency of a semiconductor radiation detector comprising the steps of: placing the detector in a substantial vacuum; cooling the detector substantially to the temperature of dry ice; applying a reverse bias to the detector during the cooling to generate a reverse leakage current in the detector; maintaining the detector substantially at the temperature of dry ice and under reverse bias for a period of 2 to 8 hours until the reverse leakage current reaches a minimum value; and further cooling the detector substantially to the temperature of liquid nitrogen.
2. A method of stabilizing the full-energy peak efficiency of a semiconductor radiation detector comprising the steps of: etching and quenching the detector; drying the detector in an ambient atmosphere of less than 40 percent relative humidity; placing the detector in a substantial vacuum; cooling the detector substantially to the temperature of dry ice; applying a reverse bias to the detector during the cooling to generate a reverse leakage current in the detector; maintaining the detector substantially at the temperature of dry ice and under reverse bias until the reverse leakage current in the detector reaches a minimum value; and further cooling the detector substantially to the temperature of liquid nitrogen.
3. A method according to claim 2 comprising the step of maintaining the detector under reverse bias during the further cooling.
4. A method according to claim 2 comprising the step of adjusting the reverse leakage current through the detector to an initial value of about 3 milliamperes.
5. A method according to claim 4 comprising the step of allowing the reverse leakage current through the detector to decline to about 0.01 to 0.1 milliamperes and the potential drop across the detector to increase to about 1,000 volts.
6. A semiconductor radiation detector made by the method of claim 2.
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