Reflector type semiconductor light-emitting element
专利汇可以提供Reflector type semiconductor light-emitting element专利检索，专利查询，专利分析的服务。并且PURPOSE:To improve the external quantum efficiency of a light-emitting diode largely by a reflection effect by setting up a parabolic curved surface in which displacement within half a critical angle to a luminous wavelength of a semiconductor crysral forming a concave element to an extracting surface for beams, which uses a light-emitting section in the crystal in a surface light-emitting type semiconductor light-emitting element as a focus, is allowed. CONSTITUTION:Each layer of an N type InP 11 as a buffer layer, In1-xGaxAs1-yPy (xapprox.=0.25, yapprox.=0.56) 12 as an active layer and P type InP 13 as a third semiconductor layer is grown on N type InP of a semiconductor substrate 10. N type InP or N type In1-xGaxAs1-yPy (xapprox.=0.2, yapprox.=0.4) as a fourth semiconductor layer 14 is grown, and a P type impurity is doped from the fourth layer side to form the light-emitting section 21. The growing crystal is formed up to the parabolic curved surface. The parabolic curved surface is formed to a curved surface having displacement within + or - half the critical angle from the parabolic curved surface so that beams are extracted to the outside of the crystal. A P side electrode 15 and N side electrodes 17 are formed. A transparent insulating film 19 is formed to the parabolic curved surface except the electrode sections and around the parabolic curved surface, and a film 20 made of a metal having high reflectivity such as Au is formed on the electrode sections and an SiO2 film.，下面是Reflector type semiconductor light-emitting element专利的具体信息内容。
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