Power field effect transistor
专利汇可以提供Power field effect transistor专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable a transistor to oscillate easily with reverse capacity reduced, by providing two gate electrodes between a comb-shaped source electrode and drain electrode arranged with their fingers interlaced mutually.
CONSTITUTION: Comb-shaped drain electrode 1 and source electrode 2 are arranged with their fingers interlaced mutually and between the both, gate electrode 3 similarlly in a comb shape is formed. At the same time, another screening gate electrode 12 made of Al, Cr, Pt, Au, etc., is also formed and connected to source electrode 2. This constitution reduces the reverse capacity to approximately one-tenth and becomes easy to oscillate, so that stable operation without distortion can be obtained at a low frequency of 1 to 4GHz, which is hardly used for GaAsFET in general.
COPYRIGHT: (C)1979,JPO&Japio，下面是Power field effect transistor专利的具体信息内容。
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