Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To minimize the floating capacity by connecting the electrode layer to be connected to the source and the drain also to the finger part for the MOS transistor of comb-line electrode structure featuring a much larger channel width than the channel length.
CONSTITUTION: N
+ -type source region 11 and drain region 12 are formed by diffusion on P-type semiconductor substrate 17, and poly-crystal gate electrode 13 of a low resistivity is coated via the SiO
2 film in order to form the channel region between region 11 and 12. Then a contact is secured for electrode layer 15 extending from source terminal S to region 11 via contact hole 16, and at the same time electrode layer 14 from drain terminal D is made to contact region 12 via hole 16. In this case, layers 14 and 15 are extended up onto finger part diffusion region 11' and 12' which feature the same component elements as region 11 and 12 to have a contact with region 11 and 12 via hole 16' and 16. As a result, the floating capacity is reduced between region 11 and 12, increasing the switching speed.
COPYRIGHT: (C)1979,JPO&Japio，下面是Semiconductor device专利的具体信息内容。
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| 一种变压器线圈导线固定装置 | 2020-05-08 | 246 |
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