Field effect transistor and its manufacture
专利汇可以提供Field effect transistor and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable a gate length and a source resistance to be reduced by placing a third semiconductor with a smaller sheet resistance than a first semiconductor and a higher carrier concentration than a second semiconductor at both sides of the first semiconductor and under the second semiconductor and then by connecting it to source and drain electrodes.
CONSTITUTION: An undoped GaAs 36 and an undoped Al
x Ga
1-x As 3 are eliminated by wet etching and then a P-type GaAs 33 and an n-type GaAs 2 are eliminated by a CCl
2 F
2 gas with a WSi gate electrode 5 and a side wall SiO
2 9 and SiO
2 9a as etching masks. An etching ratio of GaAs for AlGaAs can be secured to be larger than 1000, thus enabling the undoped Al
x Ga
1-x As 3 to remain near the gate electrode in an umbrella shape. Holes of GaAs after etching enter below the umbrella of the undoped Al
x Ga
1-x As 3 by approximately 500Å due to nearly anisotropic etching. A high-concentration n-type GaAs 4 which is doped with Si is allowed to grow selective by the MOCVD method (growth temperature: 700) with the WSi gate electrode 5 and side walls SiO
2 9 and SiO
2 9a as masks.
COPYRIGHT: (C)1992,JPO&Japio，下面是Field effect transistor and its manufacture专利的具体信息内容。
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