Low power digital circuit utilizing avalanche breakdown
阅读：718发布：2021-08-16
专利汇可以提供Low power digital circuit utilizing avalanche breakdown专利检索，专利查询，专利分析的服务。并且A low power circuit utilized to perform logic and switch functions comprises a single junction transistor with a first diode connected in series with the base and a second diode connected in series with the collector. This circuit, which utilizes avalanche breakdown of both diodes, requires no DC voltages or overlapping pulses.，下面是Low power digital circuit utilizing avalanche breakdown专利的具体信息内容。
1. A circuit apparatus comprising: a junction transistor; a first diode coupled to the transistor; a second diode coupled to the transistor; a first terminal coupled to the first diode; a second terminal coupled to the second diode; a third terminal coupled to the emitter of the transistor; the circuit path between the anode and cathode of the first diode being characterized by a first capacitance; tHe circuit path between the anode and cathode of the second diode being characterized by a second capacitance; the circuit path between the emitter and base of the transistor being characterized by a third capacitance; and the circuit path between the base and collector of the transistor being characterized by a fourth capacitance, the magnitude of the fourth capacitance being substantially greater than the first, second or third capacitances.
2. The apparatus of claim 1 wherein the junction transistor is an NPN transistor.
3. The apparatus of claim 2 further comprising a fourth terminal coupled to the collector of the transistor.
4. The apparatus of claim 2 wherein: the anode of the first diode is coupled to the collector of the transistor; the cathode of the first diode is coupled to the first terminal; the anode of the second diode is coupled to the base of the transistor; and the cathode of the second diode is coupled to the second terminal.
5. The apparatus of claim 3 further comprising: first voltage pulse means coupled to the first terminal for causing the first diode to operate in avalanche breakdown in order to charge the fourth capacitance; and second voltage pulse means coupled to the second terminal for causing the second diode to operate in avalanche breakdown in order to discharge the fourth capacitance.
6. The apparatus of claim 4 wherein: the first voltage pulse means is a positive polarity voltage pulse having an amplitude that is greater than the breakdown potential of the first diode; and the second voltage pulse means is a positive polarity voltage pulse having an amplitude that is sufficient to cause breakdown of the second diode.
7. The apparatus of claim 5 further comprising third voltage pulse means coupled to the emitter of the transistor for causing conduction in the transistor if the fourth capacitance is substantially discharged.
8. The apparatus of claim 6 wherein the third voltage pulse means is a positive polarity voltage pulse having an amplitude that is sufficient to cause the emitter-base junction of the transistor to be forward biased thereby allowing conduction in the transistor if the fourth capacitance is substantially discharged.
9. The apparatus of claim 2 wherein: the cathode of the first diode is coupled to the base of the transistor; the anode of the first diode is coupled to the first terminal; the cathode of the second diode is coupled to the emitter of the transistor; and the anode of the second diode is coupled to the second terminal.
10. The apparatus of claim 9 further comprising: a third diode coupled to the transistor; the circuit path between the anode and cathode of the third diode being characterized by a fifth capacitance, the magnitude of the fifth capacitance being substantially less than the fourth capacitance; and a fourth terminal coupled to the third diode.
11. The apparatus of claim 10 wherein the anode of the third diode is coupled to the fourth terminal and the cathode of the third diode is coupled to the collector of the transistor.
12. The apparatus of claim 11 further comprising: first voltage pulse means coupled to the first terminal for causing the first diode to operate in avalanche breakdown in order to charge the fourth capacitance; and second voltage pulse means coupled to the second terminal for causing the second diode to operate in avalanche breakdown in order to discharge the fourth capacitance.
13. The apparatus of claim 12 wherein: the first voltage pulse means is a negative polarity voltage pulse having an amplitude that is greater than the breakdown potential of the first diode; and the second voltage pulse means is a negative polarity voltage pulse having an amplitude that is greater than the breakdown potential of the first diode.
14. The apparatus of claim 13 further comprising: a third voltage pulse means coupled to the fourth terminal for caUsing the fourth diode and the emitter-base junction of the transistor to be further biased in order to cause substantial conduction in the transistor if the fourth capacitance is substantially discharged.
15. The apparatus of claim 14 wherein the third voltage pulse means is a negative polarity voltage pulse having an amplitude that is sufficient to forward-bias the third diode if and only if the fourth capacitance is discharged.
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