Mercury sulfide films and method of growth专利检索-液相外延微电子学专利检索查询-专利查询网

Mercury sulfide films and method of growth

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专利汇可以提供Mercury sulfide films and method of growth专利检索，专利查询，专利分析的服务。并且Monocrystalline films or layers of hexagonal mercury sulfide or cinnabar are epitaxially grown on monocrystalline optical or semiconductive substrates using liquid phase epitaxy. The films are grown by forming a charge consisting of HgS, Na2S, and S; heating the charge to above the 344*C transition temperature of HgS to form a homogeneous melt consisting of HgS solute in Na2S4 solvent; lowering the temperature of the melt to saturate the solvent with HgS; inserting a monocrystalline substrate seed crystal into the melt; and, slowly cooling the melt to supersaturate the melt with respect to HgS, then precipitate HgS out of solution and form a monocrystalline layer of cinnabar on the substrate seed crystal.，下面是Mercury sulfide films and method of growth专利的具体信息内容。

权利要求

1. A METHOD OF FORMING A LAYER OF MONOCRYSTALLINE HEXAGONAL MERCURY SULFIDE ON A MONOCRYSTALLINE SUBSTRATE, COMPRISING: FORMING A MELT ABOVE THE HGS TRANSITION TEMPERATURE OF 344*C, SAID MELT CONSISTING OF ABOUT 0.15-0.20 MOLE OF HGS AND 0.85-0.80 MOLE OF NA2S. LOWERING THE TEMPERATURE OF SAID MELT TO SATURATE SAID MELT WITH RESPECT TO HGS, INSERTING A MONOCRYSTALLINE SUBSTRATE INTO SAID MELT, SAID SUBSTRATE BEING STABLE IN SAID MELT AND HAVING A DEPOSITION SURFACE, AND COOLING SAID MELT FURTHER TO SUPERSATURATE WITH RESPECT TO THE HGS TO PRECIPTIATE HGS OUT OF THE MELT AND FORM A MONOCRYSTALLINE LAYER OF HEXAGONAL HGS ON THE DEPOSITION SURFACE OF SAID SUBSTRATE.

2. The method set forth in claim 1, wherein said monocrystalline substrate is of CdS and said deposition surface is of (0001) orientation.

3. The method set forth in claim 1, wherein said melt consists of 0.15 mole HgS and 0.85 mole Na2S4, wherein the temperature of said forming step is about 350*C, the temperature of said lowering step is about 340*C, the cooling rate of said cooling step is about 0.5*C/hr and is terminated at about 300*C, and wherein said substrate is rotated about 5 rpm during at least said cooling step.

4. A composite prepared by the method recited in claim 1 comprising: a substrate of a monocrystalline II-VI compound; and an epitaxial layer of monocrystalline hexagonal crystal structure HgS formed on said substrate.

5. A composite as defined in claim 4 wherein said substrate is of CdS.

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