Formation of abrupt junctions in liquid phase epitaxy
阅读：661发布：2021-11-04
专利汇可以提供Formation of abrupt junctions in liquid phase epitaxy专利检索，专利查询，专利分析的服务。并且In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.，下面是Formation of abrupt junctions in liquid phase epitaxy专利的具体信息内容。
1. IN A METHOD FOR MANUFACTURING MULTIPLE LAYERS BY LIQUID PHASE EPITAXIAL GROWTH COMPRISING THE STEPS OF CONTACTING A SEMICONDUCTOR SUBSTRATE WITH AT LEAST TWO DIFFERENT SEMICONDUCTOR SOLUTIONS FOR SUBSEQUENT EPITAXIAL GROWTH ON SAID SUBSTRATE, THE IMPROVEMEOT WHICH COMPRISES: AFTER FORMING AN EPITAXIAL GROWTH LAYER ON SAID SUBSTRATE BY CONTACTING IT WITH ONE OF SAID SOLUTIONS AND PRIOR TO FORMING A SUBSEQUENT EPITAXIAL GROWTH LAYER, ANOTHER SOLUTION, WHICH IS SUBSTANTIALLY SATURATED WITH SOLUTE CONTAINED IN SAID SOLUTION WHICH HAS BEEN CONTACTED WITH SAID SUBSTRATE AND WHICH DISSOLVE THE NECESSARY COMPONENT OR COMPONENTS THEREIN AND REMOVES THEM FROM THE FORMER LAYER, CONTACTING SAID FORMER, EPITAXIAL GROWTH LAYER, WHEREIN THE TEMPERATURES OF SAID ANOTHER SOLUTION IS HELD CONSTANT OR RAISED SLIGHTLY DURING THE CONTACTING WITH SAID ANOTHER SOLUTION.
2. A method of claim 1, wherein the principal face of said semiconductor substrate comprises a component of the III-V group, and said solutions, respectively, comprise semiconductor solutes of the III-V group.
3. A method of claim 2, wherein the principal face of said semiconductor substrate is of GaAs, both of said at least two different solutions contained Ga, Al and GaAs, and said another solution which is a saturated solution containing Ga and GaAs but substantially excludes Al.
4. A method of claim 3, wherein the temperature of said another solution is controlled to be not lowered during the contacting with said another solution.
5. A method of claim 3, wherein the temperature of said another solution is held constant or raised slightly during the contacting with said another substance.
6. A method of claim 2, wherein the temperature of said another solution is controlled to be not lowered during the contacting with said another solution.
7. A method of claim 2, wherein the principal face of said semiconductor substrate is of GaAs, both of said at least two different substances contain Ga, Al and GaAs, and said another substance contains Ga and GaAs but substantially excludes Al.
8. A method of claim 2, wherein the temperature of said another solution is held constant or raised slightly during the contacting with said another substance.
9. A method of claim 1, wherein the temperature of said another solution is controlled to be not lowered during the contacting with said another solution.
10. A method of claim 1, wherein the principal face of said semiconductor substrate comprises a component of the III-V group, and said solutions respectively, comprise semiconductor solutes of the III-V group.
11. A method of claim 1, wherein the temperature of said another solution is held constant or raises slightly during the contacting with said another substance.
12. In a method for manufacturing a semiconductor device of multiple layers epitaxially grown By liquid phase epitaxial growth wherein a semiconductor substrate is contacted by at least two different semiconductor solutions for sequential epitaxial growth of a layer from each of said solutions, the improvement which comprises, after forming of a first epitaxial growth layer, and prior to forming a second epitaxial growth layer, contacting said first epitaxial growth layer with a semiconductor solution that prevents at least one component in the first epitaxial growth layer from diffusing into the second epitaxial growth layer during formation of said second epitaxial growth layer, whereby a steep slope of concentration of said one component is produced at the junction between the first and second epitaxial grown layers.
13. A method for manufacturing a semiconductor of multiple layers by liquid-phase epitaxial growth comprising the steps of contacting a semiconductor substrate with at least two different liquid-phase substances for subsequent epitaxial growth on said substrate, characterized in that: after forming an epitaxial growth layer with a first of said solutions and prior to forming a subsequent epitaxial growth layer, another solution on which is saturated with a solute of said first solution which dissolves the unnecessary component or components therein and removes them from the former layer, contacts said former epitaxial growth layer.
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