Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof
阅读：758发布：2021-11-05
专利汇可以提供Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof专利检索，专利查询，专利分析的服务。并且Thin layers of mercury cadmium telluride, (Hg,Cd)Te, are formed by liquid phase epitaxy.，下面是Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof专利的具体信息内容。
1. A METHOD OF FORMING A LAYER OF MERCURY CADMIUM TELLURIDE OF A DESIRED COMPOSITION ON A SUBSTRATE, THE METHOD COMPRISING: CONTACTING A SURFACE OF THE SUBSTRATE WITH A LIQUID SOLUTION OF ABOUT 1-X MOLE PART MERCURY, ABOUT X MOLE PART CADMIUM, AND ABOUT 1 MOLE PART TELLURIUM, WHEREIN X IS BETWEEN 0 AND 1, AND THE LIQUID SOLUTION PROXIMATE THE SURFACE OF THE SUBSTRATE HAVING A LIQUIDUS TEMPERATURE SUBSTANTIALLY IDENTICAL TO THE SOLIDUS TEMPERATURE OF THE DESIRED COMPOSITION OF MERCURY CADMIUM TELLURIOE, AND PRODUCING SUPERSATURATION AND GROWTH OF A LAYER OF MERCURY CADMIUM TELLURIDE ON THE SURFACE OF THE SUBSTRATE.
2. The method of claim 1 wherein the volume of liquid solution is much greater than the volume of the layer of mercury cadmium telluride.
3. The method of claim 2 and further comprising: removing excess liquid solution from contact with the layer of mercury cadmium telluride.
4. The method of claim 1 wherein producing supersaturation and growth comprises cooling the liquid solution.
5. The method of claim 4 wherein the liquid solution is cooled at a rate of less than about 6*C per minute.
6. The method of claim 5 wherein the liquid solution is cooled at a rate of about 1*C per minute.
7. The method of claim 4 wherein cooling the liquid solution comprises establishing a temperature gradient in the solution in a direction perpendicular to the surface of the substrate.
8. The method of claim 1 wherein the substrate is cadmium telluride.
9. The method of claim 8 wherein x about 0.035.
10. The method of claim 1 wherein the substrate is a MgAl2O4 substrate having a cadmium telluride coated surface.
11. A low temperature growth method for forming mercury cadmium telluride layers on a substrate, the method comprising: forming a liquid solution of mercury, cadmium, and tellurium in a closed container, the amount of mercury plus cadmium in the liquid solution being approximately equal to the amount of tellurium in the solution, contacting the liquid solution with a substrate, cooling the solution to cause supersaturation and growth of a layer of mercury cadmium telluride on the substrate, the volume of the mercury cadmium telluride layer being much less than the volume of the remaining liquid solution, and terminating contact of the liquid solution with the layer of mercury cadmium telluride.
12. The method of claim 11 wherein the liquid solution is cooled at a rate of less than about 6*C per minute.
13. The method of claim 12 wherein the liquid solution is cooled at a rate of about 1*C per minute.
14. The method of claim 11 wherein the substrate is cadmium telluride.
15. The method of claim 14 wherein x, the mole fraction of cadmium telluride in the solution, is about 0.20.
16. The method of claim 14 wherein x, the mole fraction of cadmium telluride in the liquid solution, is about 0.065.
17. The method of claim 16 wherein the liquid solution has a temperature of about 715*C to about 725*C when the liquid solution is contacted with the substrate.
18. The method of claim 17 wherein the liquid solution has a temperature of about 690*C to about 720*C when contact of the liquid solution with the layer of mercury cadmium telluride is terminated.
19. The method of claim 18 wherein the liquid solution is cooled at a rate of less than 6*C per minute.
20. The method of claim 19 wherein the liquid solution is cooled at a rate of about 1*C per minute.
21. The method of claim 14 wherein x, the mole fraction of cadmium telluride in the liquid solution, is about 0.035.
22. The method of claim 21 wherein the liquid solution has a temperature of about 694*C to about 715*C when the liquid solution is contacted with the substrate.
23. The method of claim 22 wherein the liquid solution has a temperature of about 686*C to about 705*C when contact of the liquid solution with the layer of mercury cadmium telluride is terminated.
24. The method of claim 23 wherein the liquid solution has cooled at a rate of between 0.1*C per minute to about 4.0*C per minute.
25. The method of claim 24 wherein the liquid solution is cooled at a rate of about 1*C per minute.
26. The method of claim 25 wherein the liquid solution has a temperature of about 690*C when contact of the liquid solution with the layer of mercury cadmium telluride is terminated.
27. The method of claim 26 wherein the liquid solution has a temperature of about 705*C when the liquid solution is contacted with the substrate.
28. The method of claim 11 wherein the liquid solution contains a slight excess of mercury.
29. The method of claim 11 and further comprising rapidly cooling the substrate and the mercury cadmium telluride layer to a temperature substantially below the solidus temperature of the mercury cadmium telluride layer after terminating contact with the liquid solution.
30. The method of claim 11 wherein the substrate is a MgAl2O4 substrate having a cadmium telluride coated surface.
31. The method of claim 11 wherein the substrate is a sapphire substrate having a cadmium telluride coated surface.
32. The method of claim 11 wherein the substrate is a quartz substrate having a cadmium telluride coated surface.
33. A SEMICONDUCTOR DEVICE FORMED BY THE METHOD OF CLAIM 11, SAID SEMICONDUCTOR DEVICE COMPRISING A LAYER OF LIQUID PHASE EPITAXIALLY GROWN HGI-XCDXTE ON A SUBSTRATE.
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