Method of forming PN junctions by liquid phase epitaxy专利检索-液相外延微电子学专利检索查询-专利查询网

Method of forming PN junctions by liquid phase epitaxy

阅读：782发布：2021-11-06

专利汇可以提供Method of forming PN junctions by liquid phase epitaxy专利检索，专利查询，专利分析的服务。并且Two layers of a semiconductor material composed of three or more elements are deposited in succession by liquid phase epitaxy on a substrate. The layers may be of different conductivity types to form a PN junction therebetween. The layers are deposited from separate solutions containing the semiconductor material and a suitable dopant. During the deposition of the first layer from one of the solutions, both of the solutions are treated in the same manner so that the composition of the second layer is the same as that of the first layer at the junction between the layers.，下面是Method of forming PN junctions by liquid phase epitaxy专利的具体信息内容。

权利要求

1. A METHOD OF DEPOSITING ON A SUBSTRATE A PAIR OF EPITAXIAL LAYERS OF SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF PROVIDING FIRST AND SECOND SOLUTIONS OF A SEMICONDUCTOR MATERIAL, HAVING SUBSTANTIALLY THE SAME RATIO OF ELEMENTS, DISSOLVED IN A HEATED MOLTEN SOLVENT, BRING FIRST AND SECOND SUBSTRATES INTO CONTACT WITH SAID FIRST AND SECOND SOLUTIONS, RESPECTIVELY, SO THAT A SURFACE OF EACH SUBSTRATE IS IN CONTACT WITH ITS RESPECTIVE SOLUTION COOLING BOTH OF SAID SOLUTIONS TO DEPOSIT FROM EACH SOLUTION A FIRST EPITAXIAL LAYER OF THE RESPECTVE SEMCONDUCTOR MATERIAL ON THE RESPECTIVE SUBSTRATE IN THE SOLUTION, SUCH THAT THE REMAINING PORTIONS OF THE FIRST AND SECOND SOLUTIONS HAVE SUBSTANTIALLY EQUAL ELEMENT RATIOS THEN REMOVING SAID SUBSTRATES FROM THE SOLUTIONS AND MOVING THE FIRST SUBSTRATE INTO THE SECOND SOLUTION SO THAT THE FIRST EPITAXIAL LAYER ON THE FURST SUBSTRATE IS IN CONTACT WITH THE SECOND SOLUTION, AND THEN FURTHER COOLING SAID SECOND SOLUTION TO DEPOSIT FROM SAID SECOND SOLUTION A SECOND EPITAXIAL LAYER OF THE SEMICONDUCTOR MATERIAL ON THE FIRST EPITAXIAL LAYER ON THE FIRST SUBSTRATE.

2. The method in accordance with claim 1 in which the semiconductor material in each of the solutions includes at least three elements to deposit epitaxial layers of a semiconductor material comprised of at least three elements.

3. The method in accordance with claim 2 in which one of said solutions contains a conductivity modifier of one conductivity type and the other solution contains a conductivity modifier of the opposite conductivity type.

4. The method in accordance with claim 3 including saturating each of the solutions with the semiconductor material prior to bringing the substrates into the solutions.

5. The method in accordance with claim 4 in which the solutions are saturated with the semiconductor material by bringing source bodies of the semiconductor material into contact with the solutions to allow at least some of the material of the source bodies to dissolve in the solutions.

说明书全文

相关专利内容

标题	发布/更新时间	阅读量
一种碲镉汞红外探测器件材料的制备方法	2020-05-08	670
包含单个晶格匹配的稀释氮化物结的薄膜柔性光电器件及制造方法	2020-05-08	957
包含晶格匹配的稀释氮化物结的薄膜柔性多结光电器件及制造方法	2020-05-08	791
台面式砷化镓掺硅阻挡杂质带太赫兹探测器及其制作方法	2020-05-12	705
极低位错密度氮化镓单晶及其助熔剂法生长方法	2020-05-12	227
用于制造可转移半导体结构、器件和器件构件的松脱策略	2020-05-12	972
采用集成滤波器的红外光学检测器	2020-05-12	198
微显示器件及其制备方法、显示面板	2020-05-14	713
基于平面化谐振耦合结构的YIG带阻滤波器及制作方法	2020-05-13	39
用于助熔剂法生长氮化物单晶的承载结构、系统及方法	2020-05-12	359

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。

申请试用

液相外延热门专利

热门分类

Method of forming PN junctions by liquid phase epitaxy

该功能需要专业版企业版VIP权限，您可以：