Apparatus for liquid-phase epitaxial growth
阅读：683发布：2021-11-07
专利汇可以提供Apparatus for liquid-phase epitaxial growth专利检索，专利查询，专利分析的服务。并且An apparatus for liquid-phase epitaxial growth of a semiconductor including a crucible comprising an outer member having a cylindrical large bore at the upper end thereof and at least one substrate-carrying recess at the bottom wall of the large bore, and a cylindrical basic inner member snugly and slidably accommodated in the bore and having a solutioncontaining bore at the lower end wall thereof which contacts with the bottom of the bore. A method for liquid-phase epitaxial growth of a hetero-epitaxial layer, comprising: holding at least two solutions each containing at least one material in containers, respectively; placing a substrate in a chamber filled with an inert gas or evacuated; heating the solutions and the substrate; contacting one of the solutions on the upper surface of the other solution so that one solution diffuses into the other solution toward the lower surface of the other solution; contacting the substrate to the lower surface of the other solution; and cooling the solutions and substrate, whereby a hetero-epitaxial layer is formed on the substrate.，下面是Apparatus for liquid-phase epitaxial growth专利的具体信息内容。
1. In an apparatus for liquid-phase epitaxial growth of a semiconductor, the improvement comprises: An outer member having therein a cylindrical large bore opened at the upper end thereof and at least one substrate-carrying recess at the bottom wall of said large bore; a cylindrical basic inner member snugly and slidably accommodated in said large bore and having at least two solution-containing bores at the lower end portion thereof excluding the central axis thereof, and opening toward said bottom wall of said large bore; a cylindrical intermediate inner member accommodated in said large bore and interposed between said basic inner member and the bottom wall of said large bore, said intermediate inner member having a communication bore extending from upper to lower ends for establishing communication between one of said two solution-containing bores and said substrate-carrying recess; and a barrier plate with a plurality of openings mounted at the open end of one of said solution containing bores.
2. The improvement as defined in claim 1, which further comprises means for defining relative rotation extent of said outer, basic and intermediate inner members with respect to one another.
3. The improvement as defined in claim 2, in which said means includes a first stopper projection formed on the bottom wall of said large bore, an arcuate recessed portion formed at the edge of the lower end of said intermediate inner member and engaged with said first stopper projection, a second stopper projection formed at the upper end of said intermediate inner member, and an arcuate recessed portion formed at the edge of the lower end of said basic inner member and engaged with said second stopper projection.
4. In an apparatus for liquid-phase epitaxial growth of a semiconductor, the improvement comprises: an outer member having therein a cylindrical large bore opened at the upper end thereof and at least one substrate-carrying recess at the bottom wall of said bore; a cylindrical basic inner member snugly and slidably accommodated in said bore and having a solution-containing bore at the lower end wall thereof and opening toward said bottom wall of said large bore; at least one cylindrical additional inner member having upper and lower end walls, snugly slidably accommodated in said large bore and interposed between said basic inner member and said bottom wall of said large bore, said additional inner member having at least one solution-containing bore at said lower end wall thereof and opening toward said bottom wall of said large bore, and a substrate-carrying recess at said uppeR end wall thereof and opening toward said lower end wall of said basic inner member.
5. The improvement as defined in claim 4 which further comprises: means for defining relative rotation extent of said outer, basic inner and additional inner members with respect to one another.
6. The improvement as defined in claim 5, in which said means includes a first stopper projection formed on said bottom wall of said large bore, an arcuate recessed portion formed at the edge of said lower end wall of said additional inner member and engaged with said first stopper projection, a second stopper projection formed at the upper end wall of said additional inner member, and an arcuate recess portion formed at the edge of the lower end wall of said basic inner member and engaged with said second stopper projection.
7. In an apparatus for liquid-phase exitaxial growth of a semiconductor material, the improvement comprises: an outer support member having therein a cylindrical large bore opened at one end thereof and at least one solution containing chamber in the side wall of said bore, said chamber communicating with said bore through at least two openings formed in said side wall; a cylindrical bottom member snugly and slidably accommodated in the deepest portion of said large bore and having at one end wall thereof opposite to the bottom of said large bore a substrate-carrying recess for carrying therein a substrate; at least one cylindrical intermediate inner member snugly and slidably accommodated in said bore and placed on said bottom member, said intermediate member having at one end wall contacting with said bottom member a solution containing recess communicable through one of said openings with said solution-containing chamber, and having at the other end wall a substrate-carrying recess for carrying a substrate; and a cylindrical inner cap member snugly and slidably accommodated in said bore and contacted through one end wall thereof with the other end wall of said intermediate inner member, said cap member having at said one end wall a solution-containing recess communicating through the other of said openings with said solution-containing recess.
8. The improvement as claimed in claim 7, in which said outer support member has at the bottom wall of said bore a rectangular locking emboss, said bottom member has at the other end thereof a rectangular locking recess engagable with said locking emboss, and said bottom member has a coupling emboss at said one end wall, said intermediate member has on said one end wall a coupling recess engageable with said coupling emboss of said bottom member, and said intermediate member has an coupling emboss on said other end wall thereof, and said cap member has on said one end thereof a coupling recess engageable with said coupling emboss of the intermediate member.
9. In an apparatus for liquid-phase epitaxial growth of a semiconductor, the improvement comprises: an outer member having therein a cylindrical large bore opened at the upper end thereof and at least one substrate-carrying recess at said bottom wall of said bore; and a cylindrical basic inner member snugly and slidably accommodated in said bore and having a solution-containing bore at a lower wall thereof and opening toward said bottom wall and with an end wall, said inner member including a small passageway extending therethrough from a portion near to the end wall of said solution-containing bore to said lower wall of said inner member.
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