Deposition of epitaxial layer from the liquid phase专利检索-液相外延微电子学专利检索查询-专利查询网

Deposition of epitaxial layer from the liquid phase

阅读：221发布：2021-11-08

专利汇可以提供Deposition of epitaxial layer from the liquid phase专利检索，专利查询，专利分析的服务。并且In depositing on a substrate by liquid phase epitaxy an epitaxial layer of a semiconductor material having a volatile element, an initial epitaxial layer of the semiconductor material of the substrate is first grown by liquid phase epitaxy on the substrate to provide a smooth, undamaged surface which is not contaminated with the volatile element of the semiconductor material to be deposited. Immediately upon removal of the substrate from the solution from which the initial epitaxial layer is deposited, the substrate is placed in the solution from which the desired epitaxial layer is deposited. Thus, the desired epitaxial layer is deposited on a smooth, undamaged surface which is not contaminated with the volatile element of the semiconductor material.，下面是Deposition of epitaxial layer from the liquid phase专利的具体信息内容。

权利要求

1. A METHOD OF DEPOSITING ON A SUBSTRATE AN EPITAXIAL LAYER OF A SINGLE CRYSTALLINE COMPOUND OR ALLOY HAVING A VOLATILE ELEMENT COMPRISING THE STEPS OF DEPOSITING ON A SURFACE OF SAID SUBSTRATE FROM A FIRST SOLUTION AN EPITAXIAL LAYER OF THE SAME MATERIAL AS THAT OF THE SUBSTRATE BY BRINGING THE SURFACE OF THE SUBSTRATE INTO CONTACT WITH THE FIRST SOLUTION, INCREASING THE TEMPERATURE OF THE FIRST SOLUTION TO MELT SOME OF THE MATERIAL OF THE SUBSTRATE AT SAID SURFACE INTO THE FIRST SOLUTION, THEN COOLING THE FIRST SOLUTION, AND IMMEDIATELY UPON REMOVING THE SUBSTRATE AND THE INITIAL EPITAXIAL LAYER FROM THE FIRST SOLUTION, DEPOSITING ON THE INITIAL EPITAXIAL LAYER FROM A SECOND SOLUTION AN EPITAXIAL LAYER OF THE COMPOUND OR ALLOY HAVING THE VOLATILE ELEMENT.

2. A method in accordance with claim 1 in which both of the solutions are in a single container and the substrate with the initial epitaxial layer thereon is moved directly from the first solution into the second solution.

3. A method in accordance with claim 2 in which both solutions are formed by simultaneously heating charges of the material to be deposited from the solution and a solvent, and the substrate is in the container while the solutions are being heated.

4. A method in accordance with claim 3 in which when the first solution is cooled to deposit the initial epitaxial layer on the surface of the substrate, the second solution is simultaneously cooled to oversaturate the second solution with the material containing the volatile element.

5. A method in accordance with claim 4 in which the substrate is of a single crystalline group III-V compound, the material in the first solution is the same group III-V compound on that of the substrate, and the material in the second solution is a group II-V compound or alloy containing a volatile element.

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