Fabricating a gallium phosphide device专利检索-液相外延微电子学专利检索查询-专利查询网

Fabricating a gallium phosphide device

阅读：760发布：2021-11-12

专利汇可以提供Fabricating a gallium phosphide device专利检索，专利查询，专利分析的服务。并且With the method of this invention a layer of gallium phosphide is formed of liquid phase epitaxy. In this invention an N-type gallium phosphide substrate and a melt of gallium-gallium phosphide solution are disposed in a boat which is inserted in a quartz tube. The melt also contains oxygen and zinc which form a recombination center pair for red emission. Zinc is supplied as a vapor phase with carrier gas. The zinc concentration of the melt and vapor equilibrate with each other and the zinc concentration of the melt is selected in consideration of the distribution coefficient of zinc and the electron concentration of the N-type substrate. The substrate is then flooded with the melt and an epitaxial layer is deposited. The zinc is diffused into the epitaxial layer and gives it P-type conductivity, but it is not diffused into the substrate so much that a zinc-oxygen pair exists in the vicinity of a P-N junction. It improves the red emission efficiency of a gallium phosphide luminescent diode.，下面是Fabricating a gallium phosphide device专利的具体信息内容。

权利要求

1. A METHOD OF FABRICATING A GALLIUM PHOSPHIDE DEVICE COMPRISING THE STEPS OF: A. PROVIDING A SUBSTRATE OF N-TYPE GALLIUM PHOSPHIDE, B. FORMING A MELT OF GALLIUM-GALLIUM PHOSPHIDE SOLUTION INCLUDING A P-TYPE IMPURITY, SAID IMPURITY HAVING A CONCENTRATION THAT MAINTAINS APPROXIMATELY EQUILIBRIUM WITH THAT OF THE AMBIENT VAPOR PHASE, AND C. GROWING A P-TYPE EPITAXIAL LAYER ON SAID SUBSTRATE FROM SAID MELT, SAID IMPURITY CONCENTRATION THEREIN BEING NOT MORE THAN ND/2.486 K X 10**20 MOL % WHEREIN ND (CM-3) IS THE CARRIER CONCENTRATION IN SAID SUBSTRATE AND K IS A DISTRIBUTION COEFFICIENT OF SAID IMPURITY.

1. A method of fabricating a gallium phosphide device comprising the steps of: a. providing a substrate of N-type gallium phosphide; b. forming a melt of gallium-gallium phosphide solution including a P-type impurity, said impurity having a concentration that maintains approximately equilibrium with that of the ambient vapor phase; and c. growing a P-type epitaxial layer on said substrate from said melt, said impurity concentration therein being not more than nd/2.486 k X 10 20 mol % wherein nd (cm 3) is the carrier concentration in said substrate and k is a distribution coefficient of said impurity.

2. A method in accordance with claim 1, wherein said substrate contains tellurium as an N-type impurity.

3. A method in accordance with claim 1, wherein said melt also contains oxygen.

4. A method in accordance with claim 3, wherein said oxygen is supplied from gallium trioxide.

5. A method in accordance with claim 3, wherein said impurity is selected from the group consisting of zinc and cadmium to form a recombination center with said oxygen.

6. A method in accordance with claim 1, wherein said melt further contains nitrogen to form a recombination center.

7. A method in accordance with claim 1, wherein a P-N junction is formed substantially between said substrate and said epitaxial layer so that a recombination center exists near said junction.

8. A method of fabricating a gallium phosphide device in a heating furnace through which a quartz tube extends which comprises: a. causing a carrier gas to flow as a stream through said tube from one end to the other; b. placing a boat within said tube; c. placing an N-type gallium phosphide substrate in said boat at the downstream end thereoF; d. placing a melt of gallium-gallium phosphide having gallium trioxide therein in the upstream end of said boat; e. vaporizing zinc into said carrier gas upstream of the boat; f. maintaining the temperature of the melt at a point where the zinc vapor is dissolved in the melt in such an amount that the partial pressure of zinc in the melt reaches equilibrium with the vapor pressure of zinc in the carrier gas, an amount of zinc therein in the equilibrium state being selected equal to or lower than nd/2.486 k X 10 20 mol %, wherein nd (cm 3) is the concentration of the N-type impurity in the substrate and k is a distribution coefficient of said zinc; and g. thereafter causing the melt containing acceptor impurity of zinc and donor impurity of deep level oxygen to overflow the gallium phosphide substrate to form an epitaxial growth layer thereon.

9. A method in accordance with claim 8, wherein the furnace maintains the melt at a temperature between 1,050*C. and 1,150*C. at the time it is caused to overflow the substrate.

10. A method in accordance with claim 8, wherein the furnace maintains the melt at a temperature of approximately 1,100*C. at the time it is caused to overflow the substrate.

11. A method in accordance with claim 9, wherein the temperature of the furnace in the region of said substrate is maintained at approximately 950*C. before the coating step and wherein the zinc is vaporized at approximately 500*C. to 570*C.

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