Method for the liquid phase epitaxial growth of semiconductor crystals
专利汇可以提供Method for the liquid phase epitaxial growth of semiconductor crystals专利检索，专利查询，专利分析的服务。并且A method for the liquid phase epitaxial growth of semiconductor crystals is performed using apparatus that comprises a dis-shaped vessel provided with a plurality of receptacles of a source solution for said epitaxial growth; a similarly disc-shaped boat disposed close to the underside of the vessel and provided with a recess for receiving a substrate on which there are to be formed semiconductor crystals by liquid phase epitaxial growth, said recess being cut out in that side of the boat which faces the vessel so as to be brought exactly under any of the receptacles of the vessel when it is rotated; a quartz pipe for supporting the boat; means for rotating either of the vessel and boat relative to the other; an envelope surrounding the vessel and boat in airtight relationship; means for conducting a desired type of gas through the envelope; and a cylindrical furnace enclosing the envelope to heat its interior with the relative position of said cylindrical furnace and envelope rendered adjustable.，下面是Method for the liquid phase epitaxial growth of semiconductor crystals专利的具体信息内容。
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