Selective liquid phase epitaxial growth process专利检索-液相外延微电子学专利检索查询-专利查询网

Selective liquid phase epitaxial growth process

阅读：943发布：2021-11-25

专利汇可以提供Selective liquid phase epitaxial growth process专利检索，专利查询，专利分析的服务。并且A process for selectively growing semiconductor material, particularly Group III-V semiconductor compounds, on semiinsulating substrates with uniform dissolution and regrowth in selected regions is disclosed. The fabrication of substantially planar monolithic semiconductor devices in a semi-insulating substrate and, in particular, light-emitting devices are also disclosed.，下面是Selective liquid phase epitaxial growth process专利的具体信息内容。

权利要求

1. A process comprising the steps of preparing a saturated solution of gallium phosphide material in gallium including a conductivity modifying impurity of one type, preparing a substrate of semi-insulating gallium phosphide material having a first plurality of parallel masking stripes to provide a first plurality of parallel unmasked regions, immersing said substrate into said solution, increasing the temperature of sAid solution by a few degrees above said given temperature to cause dissolution of at least a portion of said substrate, lowering the temperature of said solution below said given temperature whereby said gallium phosphide material is epitaxially deposited on said unmasked regions of said substrate to form stripes of gallium phosphide of said one conductivity type therein, removing said substrate from said solution, forming a planar surface in said substrate including said stripes of one conductivity type separated by stripes of semi-insulating material, forming a second plurality of parallel masking stripes on said planar surface disposed to intersect said stripes of said one conductivity type to provide a second plurality of parallel unmasked regions thereon, preparing another saturated solution of gallium phosphide material in gallium including a conductivity modifying impurity of opposite type, immersing said substrate into said other solution, lowering the temperature of said other saturated solution whereby said gallium phosphide material is epitaxially deposited on said unmasked regions of said substrate to form stripes of gallium phosphide of said opposite conductivity type thereon thereby producing P-N junctions at the intersection of said one-type conductivity stripes with said opposite-type conductivity stripes.

2. The process of claim 1 in which said conductivity modifying impurity of one type is P-type and said conductivity modifying impurity of opposite type is N-type.

3. The process of claim 1 in which said conductivity modifying impurity of one type is N-type and said conductivity modifying impurity of opposite type is P-type.

说明书全文

相关专利内容

标题	发布/更新时间	阅读量
包含单个晶格匹配的稀释氮化物结的薄膜柔性光电器件及制造方法	2020-05-08	957
台面式砷化镓掺硅阻挡杂质带太赫兹探测器及其制作方法	2020-05-12	705
微显示器件及其制备方法、显示面板	2020-05-14	713
一种用于液相外延设备的炉门装置	2020-05-12	492
法拉第转子，光隔离器和制造法拉第转子的方法	2020-05-11	816
半导体装置及其制造方法	2020-05-08	302
一种电催化产氧薄膜电极材料的制备方法及其制品和应用	2020-05-11	665
一种机械臂全自动浸泡式制备薄膜的装置	2020-05-08	692
基于异质结薄膜光源的光耦、其放大集成电路及制作方法	2020-05-11	32
一种机械臂全自动浸泡式制备薄膜的装置	2020-05-13	547

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。

申请试用

液相外延热门专利

热门分类

Selective liquid phase epitaxial growth process

该功能需要专业版企业版VIP权限，您可以：