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Formation of activated layer of compound semiconductor

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专利汇可以提供Formation of activated layer of compound semiconductor专利检索,专利查询,专利分析的服务。并且PURPOSE:To form an activated layer suitable for high-speed action on the surface of a semiconductor substrate crystal of a compound by implanting sulfur atoms and boron or aluminum atoms into the crystal as donor atoms and by annealing the crystal. CONSTITUTION:Sulfur atoms and 1-5 times as much boron or aluminum atoms as sulfur atoms are implanted into the same region of a semiconductor substrate crystal of a III-V group compound with an ion implanter or the like. The region contg. the implanted donor atoms is annealed in an electric furnace or the like, and electrodes are formed by vapor deposition to form drain, source and gate regions. Thus, an activated layer for a field effect type transistor with improved characteristics is obtd.,下面是Formation of activated layer of compound semiconductor专利的具体信息内容。

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