LOW DEFECT DENSITY SILICON
专利汇可以提供LOW DEFECT DENSITY SILICON专利检索，专利查询，专利分析的服务。并且The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process comprises controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. In ingot form, the axially symmetric region has a width, as measured from the circumferential edge of the ingot radially toward the central axis, which is at least about 30 % the length of the radius of the ingot. The axially symmetric region additionally has a length, as measured along the central axis, which is at least about 20 % the length of the constant diameter portion of the ingot.，下面是LOW DEFECT DENSITY SILICON专利的具体信息内容。
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6 生产单晶硅的方法
