Formation of contact
专利汇可以提供Formation of contact专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain a stable electrical characteristic without being affected by a substratum during a growth process of W by a method wherein a transition metal layer is deposited in a contact hole formed in an insulator layer, it is transformed into a silicide and W is deposited on the silicide layer by a chemical vapor growth method.
CONSTITUTION: An insulator layer, e.g. a silicon oxide layer, is formed for protection use of a P-N junction part on the surface of a semiconductor layer 1; desired parts are opened to form contact holes 5. A Ti titanium layer 6 is deposited in the contact holes 5; a heat treatment for silicidation reaction use is executed. The titanium layer 6 and a titanium nitride layer 7 are deposited on the whole surface of the insulator layer 4 and the contact holes 5. Only the titanium layer 6 and the titanium nitride layer 7 are dissolved and removed by an etching liquid such as sulfuric acid or the like; titanium silicide layers 8, 9 are formed in a self-aligned manner only on bottom parts B of the contact holes 5. In addition, when a mixed gas composed of WF
6 gas and silane SiH
4 gas is made to flow to the semiconductor layer 1, a W layer 10 can be grown on the titanium silicide layers 8, 9.
COPYRIGHT: (C)1991,JPO&Japio，下面是Formation of contact专利的具体信息内容。
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