Semiconductor device and its manufacture
专利汇可以提供Semiconductor device and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE:To reduce the product of power and delay time, by causing the increasing effect of diffusion coefficient partially with ion injection and by independently controlling the thickness of the epitaxial layer being the effective base of injector and that of the epitaxial layer being the driver channel and the depletion layer spread part. CONSTITUTION:With conventional method, the P type emitter 3 of injector, P type collector 4 in common use with the gate of driver, and the N type drain of driver are sequentially formed on the N- epitaxial layer 2. The oxide film 13 is removed between the layers 3 and 4, and H ions 15 are radiated by matching the center of emission to the boundary 14 of the N substrate 1 and the N epitaxial layer 2. The crystal lattice loss region 16 is formed with this emission, increasing the impurity diffusion coefficient considerably. Next, with heat treatment at low temperature for a short time, the impurity of substrate 1 is diffused and the thickness 10 of the epitaxial layer under the injector is made thin than that 11 of the epitaxial layer of driver. Thus, the current amplification factor of base common of the injector is increased, the gate capacitance is reduced and the product of power and deley time can be reduced.，下面是Semiconductor device and its manufacture专利的具体信息内容。
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7 磁阻效应元件
