专利汇可以提供Semiconductor devices utilizing AlGaAsP专利检索,专利查询,专利分析的服务。并且A method of minimizing stress within large area semiconductor devices which utilize a GaAs substrate and one or more thick layers of AlxGa1-xAs is provided, as well as the resultant device. In general, each thick AlxGa1-xAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an AlxGa1-xAszP1-z layer of approximately the same thickness and with the same concentrations of Al and Ga. The AlxGa1-xAszP1-z layer is lattice matched to the GaAs substrate by replacing a small percentage of the As in the layer with P.,下面是Semiconductor devices utilizing AlGaAsP专利的具体信息内容。
What is claimed is:
This application is a continuation-in-part of U.S. patent application Ser. No. 11/212,420, filed Aug. 24, 2005, the disclosure of which is incorporated herein by reference for any and all purposes.
This invention was made with U.S. Government support under Grant No. MDA972-03-C-0101 awarded by DARPA. The United States Government has certain rights in this invention.
The present invention relates generally to semiconductor devices and, more particularly, to a device design and fabrication method for controlling stress in a semiconductor device. BACKGROUND OF THE INVENTION
There is a degree of strain built into many semiconductor devices, the strain due both from the selected manufacturing process (e.g., selected deposition technique and associated parameters) and from lattice mismatch between materials.
In some instances a material may be purposefully strained during growth in order to control a particular quality of the final device, for example to match the band gap of a solar cell or solar cell layer to a particular wavelength within the solar spectrum. If the portion of the device that is strained is very thin, on the order of 10 nanometers, then the strain within the region will have little effect on the overall structure. In contrast, stress within the bulk materials of the semiconductor structure can have a significant effect on the overall structure. For example, the deposition of a 3.5 micron layer of AlxGa1-xAs on a 1 centimeter wide, 1 millimeter long, 140 micron thick GaAs substrate will impart sufficient compressive stress to the material to cause a curvature of approximately 4 microns.
In very large area devices, the curvature which results from the deposition of thick layers of lattice mismatched material can lead to both performance issues as well as processing problems. For example, semiconductor devices which develop substantial heat during operation (e.g., high power transistors, processors, etc.) must typically be bonded to a heat sink in order to be able to operate at the power levels and durations required for most commercial applications. As the bonding process requires the semiconductor device to be flat, if it is not, for example due to the curvature imparted by a mismatched deposited layer, the flattening process will introduce a stress field into the device. Furthermore, since the bonding process is typically performed at a temperature greater than 140° C., differences between the thermal expansion coefficient of the heat sink and that of the semiconductor device cause an additional stress to be imparted to the device during cooling. The stress fields resulting from the flattening and high temperature bonding processes can lead to non-uniform, poor performance in the finished device. Additionally, independent of the final device area, curvature of the wafer induced by lattice mismatched material can lead to complications during the wafer fabrication process. As the wafer is thinned, this curvature will become significant and can lead to various issues, such as unintentional breakage, non-uniform chuck contact, non-uniform photoresist coating, or depth-of-focus limitations during photolithography steps. Accordingly it is clearly advantageous to eliminate, or at least reduce, these induced stress fields.
In some instances, a bulk layer material can be selected which, in combination with the selected substrate, does not suffer from the above-noted stress fields. For example, assuming a bulk layer of InGaAsP deposited on GaAs, there is a wide range of available band-gaps and lattice constants (see region 201 of
Accordingly, what is needed in the art is a design and fabrication process that can be used to achieve the benefits of an AlxGa1-xAs/GaAs structure without incurring the poor performance and processing problems that result from the two materials having different lattice constants. The present invention provides such a design and fabrication process.
The present invention provides a method of minimizing stress within large area semiconductor devices (i.e., greater than 0.25 square millimeters) which utilize a GaAs substrate and one or more thick (i.e., greater than 0.2 microns) layers of AlxGa1-xAs. In general, each thick AlxGa1-xAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an AlxGa1-xAszP1-z layer of approximately the same thickness and with the same concentrations of Al and Ga. Unlike the AlxGa1-xAs layer, however, the AlxGa1-xAsP1-z layer is lattice matched to the GaAs substrate by replacing a small percentage (i.e., less than 4 percent) of the As in the layer with P. In another aspect of the invention, a large area semiconductor device comprised of a GaAs substrate and one or more thick layers of AlxGa1-xAszP1-z is provided, the AlxGa1-xAszP1-z layers being lattice matched to the GaAs substrate.
A further understanding of the nature and advantages of the present invention may be realized by reference to the remaining portions of the specification and the drawings.
In order to overcome the afore-described problems, the present inventors have found that the inclusion of small amounts of phosphorous in AlxGa1-xAs allow the lattice constant of the new material to be varied such that the stress field within a structure containing the AlxGa1-xAszP1-z layer can be controlled. As a result, bulk layers of AlxGa1-xAszP1-z, preferably with a thickness greater than 0.1 microns and more preferably with a thickness greater than 0.2 microns, can be grown directly on GaAs or placed elsewhere within the structure in order to achieve an overall structure that is either flat or under a tensile stress, the later condition providing a means of minimizing or eliminating the effects of additional processing steps (e.g., the heat sink bonding procedure).
As shown in
It will be appreciated that the present invention lies in the use of one or more layers of AlxGa1-xAszP1-z within a device structure, these layers being selected to achieve a lattice match with GaAs. The invention is generally applicable to large area devices, for example those with an area greater that 0.25 square millimeters, and where the AlxGa1-xAszP1-z layers are greater than 0.1 microns thick, and preferably greater than 0.2 microns thick. Accordingly the invention is not limited to a specific structure, AlxGa1-xAszP1-z compound, or deposition technique.
In general, the invention can either be used during the initial design phases of a device, or used to improve the performance of an existing design which utilizes one or more AlxGa1-xAs layers and a GaAs substrate. In the first approach, the device is designed following normal design techniques, but utilizing layers of AlxGa1-xAszP1-z that are lattice matched to GaAs. In the second approach, each AlxGa1-xAs layer within a structure is replaced with an AlxGa1-xAszP1-z layer of the same thickness and with the same concentration of Al and Ga. A small portion, less than 4 percent, of the As in the layer is replaced with P, thus achieving the desired lattice match with GaAs. The exact percentage of P added to the layer is based on the phase diagram for AlxGa1-xAszP1-z shown in
The material of the present invention, i.e., AlxGa1-xAszP1-z, can be used to replace AlxGa1-xAs in any of a variety of structures in which it is desirable to control the stress within the layer, thereby creating a stressless structure. Furthermore it is possible to fabricate such layers/structures using any of a variety of techniques including metal organic chemical vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE) and vapor phase epitaxy (VPE).
An exemplary semiconductor structure utilizing the invention, specifically a solar cell structure, is shown in
For many solar cell applications, for example satellite arrays, the substrates undergo significant thinning in order to reduce the array weight. In a conventionally fabricated array such as that described in Table I, the residual stresses can lead to significant curvature in the array after completion of the substrate thinning procedure. The present invention (e.g., Table II) overcomes this problem.
As previously noted, the present invention is not limited to a single type of semiconductor device. For example, another type of semiconductor device that can benefit from application of the present invention is an avalanche photo diode (APD) structure such as that shown in
It will be understood that the detailed device structures described above are simply exemplary embodiments intended to demonstrate the application of the invention and are not intended to limit the scope of the invention to these particular structures. Once the benefits and the method of implementing the invention are understood, those of skill in the art will recognize that the invention can be implemented in other structures. In general terms, the inclusion of phosphorous in AlxGa1-xAs can be used to achieve a strainless multi-layer design. Layers of AlxGa1-xAszP1-z can also be used to mitigate the compressive strain built into a structure due to layer material selection, metallization, surface dielectrics or polymers, or other processing steps.
As will be understood by those familiar with the art, the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. Accordingly, the disclosures and descriptions herein are intended to be illustrative, but not limiting, of the scope of the invention which is set forth in the following claims.
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