专利汇可以提供Manufacture of semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE:To improve the reliability of the device by the method wherein tape is pasted on the entire surface of a wafer provided with unit circuit elements arranged lengthwise and crosswise and fitted with soldered electrodes, and the element boundary is bevel etched from the other surface and filled with protective film, and this part is cut after the tape is removed. CONSTITUTION:Soldered electrodes 2 and 3 connected to n layer 4 and p layer 5 are provided on one surface of a substrate provided with circuit elements arranged lengthwise and crosswise, and soldered electrode 6 connected to n layer 7 is provided on the other surface. V-groove 10 is cut in the center of surface oxide film 9. After circuit elements are divided, resin tape 11 is pasted on the side of electrodes 2 and 3, and by bevel etching with an etching solution, the tape is reached; the surrounding part of electrode 6 assumes the form of canopy. Next, groove 13 is dried in a vacuum and covered with polyimide resin 14; and tape 11 is removed, and then sintering is operated. Next, bonding material 15 of Si resin is filled, and crack 16 is produced on the protective part of the boundary. Since protective film 14 is thin, it is not damaged by thermal distortion in the subsequent assembling, and the reliability of the resultant device is increased. Further, since it is bonded with bonding material 15, it can be conveniently handled like a wafer.,下面是Manufacture of semiconductor device专利的具体信息内容。
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