Manufacture of photodiode
专利汇可以提供Manufacture of photodiode专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain the manufacture of a photodiode which has a high sensitivity to infrared-rays and an easy manufacture by forming the photodiode between grooves of a substrate on which the grooves are formed. CONSTITUTION:After grooves 11 are formed at a predetermined interval on a silicon substrate 10, oxide films 12 are formed on the upper and lower faces of the substrate, the substrate is so superposed with other substrate 13 as to superpose the face formed with the grooves, and bonded. Then, the substrate formed with the grooves is polished to allow it to remain in a predetermined thickness, and a photodiode is formed between the grooves of the substrate formed with the grooves. A diffused layer 16 having high impurity concentration is formed to the depth arriving at the oxide film on the bottom of the groove on the substrate formed with the grooves. That is, since the space is formed in the substrate, the depth of a diffused layer for isolating the photodiodes becomes shallow, and the thickness of a photosensitive layer can be increased. Thus, the photodiode having high sensitivity for infrared rays can be easily manufactured.，下面是Manufacture of photodiode专利的具体信息内容。
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