Manufacture of dielectric insulation isolating substrate
专利汇可以提供Manufacture of dielectric insulation isolating substrate专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable simultaneous formation of the monocrystalline silicon islands of the high withstand voltage element portion and the low withstand voltage element portion which are different in depth, by forming a mask film of an appropriate film thickness in a planar wafer state by means of the photolithography technique, thereby easily forming V-trenches for insulating and isolating between the respective silicon islands with one anisotropical etching.
CONSTITUTION: On a monocrystalline silicon substrate 1, an oxide film 2 having a sufficient thickness t
1 as a mask material is formed by means of the photolithography technique. This film thickness t
1 is enough to form the V-trench depth for isolating the high withstand voltage element portion by means of anisotropical etching. Then, at the position which is to become the bottom surface of the monocrystalline silicon island of the low withstand voltage element portion, an oxide film 3 is formed by means of the photolithography technique, which oxide film 3 has a pedetermined film thickness t
2 calculated by the island depth d
2 which is desired for the low withstand voltage element portion. Deep V-trenches 6 for isolating the silicon islands of the high withstand voltage element portion from each other, the bottom surface 7 of the shallow silicon island of the low withstand voltage element portion, and relatively shallow V-trenches 8 for insulating and isolating between the low withstand element portions or between the low withstand voltage element portion and the high withstand voltage element portion are simultaneously formed with one etching.
COPYRIGHT: (C)1987,JPO&Japio，下面是Manufacture of dielectric insulation isolating substrate专利的具体信息内容。
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