Semiconductor storage device and manufacture thereof
专利汇可以提供Semiconductor storage device and manufacture thereof专利检索，专利查询，专利分析的服务。并且PURPOSE:To increase the electric capacity without increasing the area occupied by a memory capacitor, by forming a groove along a relatively long periphery of the memory capacitor and utilizing the side walls of the groove as a capacitor. CONSTITUTION:A memory capacitor 7 is composed of a planar capacitor section and a peripheral capacitor 10 comprising a groove 17 formed in the periphery of the planar capacitor section. Particularly, the peripheral capacitor 10 is composed of the shallow groove 17 formed in the periphery of the planar capacitor section and of a thin insulation film 3a and a memory cell plate 4 formed on the side walls of the groove 17. An element isolating region 2 formed of a thick insulation film is provided on the bottom of the groove 17. Further, a channel-cutting P-type impurity diffused layer 11 is provided under the element isolating region 2. The impurity diffused layer, namely an N-type diffused layer 6b and the P-type impurity diffused layer 11 constitute an Hi-C structure and have functions of increasing the capacity of the capacitor by their unction capacity and preventing soft errors.，下面是Semiconductor storage device and manufacture thereof专利的具体信息内容。
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