Manufacture of semiconductor element
专利汇可以提供Manufacture of semiconductor element专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent the collapse of an image shape due to poor converage of resist at a high withstanding voltage part in a photolithography process, by introducing a process, wherein a thermal oxide film is formed on the entire region, in which a single crystal Si substrate is exposed, is formed when a step-part photolithgraphy etching is performed, thereafter, an Si3N4 film and a protecting film are removed, and the alkali anisotropic etching is performed with the remaining thermal oxide film as a mask. CONSTITUTION:A protecting film 2 and an Si3N4 film 22, which are formed on a single crystal Si substrate 1, undergo photolithgraphy etching, and the substrate 1 is exposed. After a thermal oxide film 24 is formed on the entire exposed region, the protecting film 21 and the Si3N4 film 22 are removed and the substrate 1 is exposed. With the thermal oxide film 24 as mask, V grooves 25 are formed by alkali anisotropic etching. Thereafter, the thermal oxide film 24 is removed. An element isolating insulating film 28 is grown on the substrate 1 to a specified thickness. Polysilicon 29 which is to become a supporting body, is deposited on the film 28. Then, the opposite side of the main surface of the substrate 1 is polished until the V grooves 25 are exposed. A shallow island region 26 formed in this way is made to be a low-voltage-element forming region. A deep island region 27 is made to be a high-withstanding-voltage-element forming region.，下面是Manufacture of semiconductor element专利的具体信息内容。
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