Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To form the favorable element isolation region in a semiconductor device by a method wherein the groove parts having the sides deeper than depth of junction and moreover being perpendicular and having the slant bases are provided in the semiconductor layer, and an insulator is accumulated to be buried in the groove parts thereof. CONSTITUTION:When the insulating accumulation layers 111 are to be formed in the groove parts provided in the semiconductor layer 101 to form the element isolation region, the groove parts having the perpendicular or the nearly perpendicular sides of depth D1 shallower than depth D2 of the groove parts to be set, and having the slant type bases, the V-type bases for example, are formed. When the insulating films 111 are accumulated in the groove parts thereof, the favorable shape insulating accumulation layers having no cavity are formed being buried. Moreover when the junction is coming in contact with the sides, by making depth of the perpendicular sides of the groove parts to deeper than depth of junction, reduction of junction depth C at the junction faces is not generated. Accordingly favorable element isolation can be attained.，下面是Manufacture of semiconductor device专利的具体信息内容。
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