专利汇可以提供Forming method for p-n junction专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain a P-N junction having short junction length by selectively forming an Si3N4 film on a substrate implanted with boron in a shallow depth, heat treating it, forming an SiO2 film which absorbs boron on the exposed part of the substrate, and diffusing the boron under the Si3N4 film in the sub strate. CONSTITUTION:Boron ions are implanted in 0.3mum from the surface in an N type Si substrate 5. A silicon nitride film 6 is selectively covered on the main surface of the substrate 5. The substrate 5 is heat treated, and an SiO2film 7 is formed on the Si exposed part not covered with the film 6. At this time, the boron existing in the vicinity of the surface of the substrate is all absorbed to the film 7, and the substrate becomes N type. On the other hand, the boron under the Si3N4 is activated to be diffused in the substrate, thereby forming a P type region 8. since the lower edge of the region 8 is shallower than the lower edge of the film 7, the end of the P-N junction 9 is faced with the side face of the film 7, but there is no increased diffusion length. In this manner, a diffused region which is smaller than the planar method can be formed,下面是Forming method for p-n junction专利的具体信息内容。
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