专利汇可以提供Manufacture of complementary mis semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE:To readily form a short-channel structure by preceding the diffusion of an impurity having small diffusion constant to the step of forming a diffused layer of a different conductive type channel element and minimizing the heat treatment of the diffusion of the impurity having large diffusion constant as required. CONSTITUTION:After a gate film 14, a gate polysilicon 15a, 15b are formed on an n type substrate on which a p type well 13 is formed, the step of diffusing source and drain regions with ion injection is performed. As and B are selected for the impurities to be diffused, a mask 16 is formed initially on a p type channel, As ion is then injected, is heat treated (at approx. 1,000 deg.C), and an n type diffused layer 18 is formed in the p type well 13. Then, a mask 19 is formed in the n type channel, B having large diffusion constant is then injected and heat treated. The heat treatment after the injection is performed at the minimum temperature (at approx. 800 deg.C) necessary for activating the B. Thereafter, a CMIS device is formed by the ordinary steps. Since the spread of the respective diffused layers due to the thermal treatment hysteresis can be reduced, it can form a circuit having 1-1.5mum of effective channel length.,下面是Manufacture of complementary mis semiconductor device专利的具体信息内容。
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