专利汇可以提供Semiconductor laser device and its manufacture专利检索,专利查询,专利分析的服务。并且PURPOSE: To increase the oscillation output by burying the 1st semiconductor layer performing the laser oscillation being held between the 2nd and 3rd semiconductor layers and then decreasing the inhibited band width of the 1st layer within the region which is away from the end face by the distance of over the carrier diffusion length than the widths of other 1st layers.
CONSTITUTION: N-type Al
0.3 Ga
0.7 As layer 2 of the 2nd semiconductor layer, N-type GaAs layer 3 of the 1st semiconductor layer and N-type Al
0.3 Ga
0.7 As layer 4 of the 3rd semiconductor layer are formed on N-type GaAs substrate 1 through the liquid- phase or vapor growing method. Then the HCl etching is applied via the mask to form at the center part of the substrate stripe part 5 reaching layer 2, and the both ends of part 5 are buried with the N-type AlGaAs layer of the 4th semiconductor layer to secure the double hetero-junction structure. After this, P-type region 8 is formed by diffusing Zn from the layer 4 side until the tip of region 8 reaches layer 2 at the region which is away by the distance of over the carrier diffusion length from the position which is to be the end face of the element when formed and which includes part 5. In this case, the Zn density of layer 3 is set identical to the N-type impurity density contained in layer 3.
COPYRIGHT: (C)1979,JPO&Japio,下面是Semiconductor laser device and its manufacture专利的具体信息内容。
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